Magnetic sensor device and magnetic sensor system

ABSTRACT

A magnetic sensor device includes at least one magnetic sensor and a support. A center of gravity of an element layout area of the at least one magnetic sensor is deviated from a center of gravity of a reference plane of the support. The at least one magnetic sensor includes four resistor sections constituted by a plurality of magnetoresistive elements. Magnetization of a free layer in each of two of the resistor sections includes a component in a third magnetization direction. The magnetization of a free layer in each of the other two resistor sections includes a component in a fourth magnetization direction opposite to the third magnetization direction.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional PatentApplication No. 63/219,584 filed on Jul. 8, 2021 and Japanese PriorityPatent Application No. 2072-42704 filed on Mar. 17, 2022, the entirecontents of each of which are incorporated herein by their reference.

BACKGROUND

The technology relates to a magnetic sensor device including a magneticsensor and a support.

A magnetic sensor device for detecting components in a plurality ofdirections of an applied magnetic field has recently been used in avariety of applications. One example of the applications of the magneticsensor device includes a magnetic position detection device that detectsthe position of a magnet movable in three dimensions.

The magnetic position detection device includes, for example, a magneticsensor device, a magnet movable along a predetermined spherical surfacearound the magnetic sensor device, and a signal processing circuit. Themagnetic sensor device detects three components in three mutuallydifferent directions of a magnetic field generated by the magnet andapplied to the magnetic sensor device, and generates three detectionsignals corresponding to the three components. Based on the threedetection signals, the signal processing circuit generates positioninformation indicating the position of the magnet. US 2009/0027048 A1discloses a three-axis magnetic sensor including an X-axis sensor, aY-axis sensor, and a Z-axis sensor.

To improve the accuracy of the position information, the detectionaccuracy of the magnetic sensor device needs to be improved. JP2015-95630 A discloses a magnetic sensor including a firstmagnetoresistive element and a second magnetoresistive element whosefree layers are magnetized in opposite directions, whereby a drop in thedetection accuracy of an external magnetic field due to variations inthe magnetization directions of the pinned layers is reduced. WO2012/172946 and WO 2015/125699 disclose a magnetic sensor including apair of magnetoresistive elements whose free magnetic layers aremagnetized in opposite directions, whereby a drop in the linearity ofthe sensor output due to deviations in the direction of a magnetic fieldto be measured is reduced.

In using the position detection device, an unintended external force canact on the substrate on which the magnetic sensor device is mounted.Moreover, the substrate temperature can change due to a change in theenvironment. In such cases, stress is applied to the magnetic sensordevice, and as a result an error can occur in the detection signal ofthe magnetic sensor device.

Suppose that the substrate has a simple planar shape such as arectangular shape. If stress is generated in the substrate due to anexternal force or temperature, the stress distribution within thesubstrate is symmetrical about the center of gravity of the planar shapeof the substrate. To reduce the effect of the stress, the magneticsensor can be mounted on the substrate so that the center of gravity ofthe planar shape of the magnetic sensor matches that of the substrate.However, in a three-axis magnetic sensor such as the one disclosed in US2009/0027048 A1 all the sensors are not able to be mounted in theforegoing manner. Moreover, there are components other than magneticsensors, like terminals, on the actual substrate. Magnetic sensors aretherefore not always able to be mounted in the foregoing manner.

SUMMARY

A magnetic sensor device according to one embodiment of the technologyincludes at least one magnetic sensor configured to detect a targetmagnetic field that is a magnetic field to be detected, the at least onemagnetic sensor including a plurality of magnetoresistive elements andan element layout area for laying out the plurality of magnetoresistiveelements, and a support that supports the at least one magnetic sensorand has a reference plane. When the magnetic sensor device is seen in afirst reference direction, a center of gravity of the element layoutarea is deviated from a center of gravity of the reference plane. Thefirst reference direction is a direction perpendicular to the referenceplane.

The at least one magnetic sensor further includes a first resistorsection and a second resistor section connected in series in a firstpath that is a path electrically connecting a first connection point anda second connection point, and a third resistor section and a fourthresistor section connected in series in a second path that is a pathelectrically connecting the first connection point and the secondconnection point. The first and fourth resistor sections are connectedto the first connection point. The second and third resistor sectionsare connected to the second connection point. The plurality ofmagnetoresistive elements constitute the first to fourth resistorsections. Each of the plurality of magnetoresistive elements includes amagnetization pinned layer having magnetization whose direction isfixed, a free layer having magnetization whose direction is variabledepending on the target magnetic field, and a gap layer located betweenthe magnetization pinned layer and the free layer.

The magnetization of the magnetization pinned layer in each of the firstand third resistor sections includes a component in a firstmagnetization direction. The first magnetization direction is adirection intersecting the first reference direction. The magnetizationof the magnetization pinned layer in each of the second and fourthresistor sections includes a component in a second magnetizationdirection. The second magnetization direction is a directionintersecting the first reference direction and opposite to the firstmagnetization direction. The magnetization of the free layer in each oftwo of the first to fourth resistor sections includes a component in athird magnetization direction when the target magnetic field is notapplied to the at least one magnetic sensor. The third magnetizationdirection is a direction intersecting the first reference direction andorthogonal to the first magnetization direction. The magnetization ofthe free layer in each of the other two of the first to fourth resistorsections includes a component in a fourth magnetization direction whenthe target magnetic field is not applied to the at least one magneticsensor. The fourth magnetization direction is a direction intersectingthe first reference direction and opposite to the third magnetizationdirection.

In the magnetic sensor device according to one embodiment of thetechnology, the magnetization of the free layer in each of the first andsecond resistor sections may include a component in the thirdmagnetization direction when the target magnetic field is not applied tothe at least one magnetic sensor. The magnetization of the free layer ineach of the third and fourth resistor sections may include a componentin the fourth magnetization direction when the target magnetic field isnot applied to the at least one magnetic sensor. Alternatively, themagnetization of the free layer in each of the first and fourth resistorsections may include a component in the third magnetization directionwhen the target magnetic field is not applied to the at least onemagnetic sensor. The magnetization of the free layer in each of thesecond and third resistor sections may include a component in the fourthmagnetization direction when the target magnetic field is not applied tothe at least one magnetic sensor.

In the magnetic sensor device according to one embodiment of thetechnology, a deviation of the center of gravity of the element layoutarea from the center of gravity of the reference plane in a secondreference direction may be greater than a deviation of the center ofgravity of the element layout area from the center of gravity of thereference plane in a third reference direction. The second referencedirection and the third reference direction may be two directionsorthogonal to the first reference direction. In such a case, an anglethat the first magnetization direction forms with respect to the secondreference direction may be in a range greater than 0° and less than 90°.

In the magnetic sensor device according to one embodiment of thetechnology, the at least one magnetic sensor may further include amagnetic field generator. The magnetic field generator may be configuredto apply a magnetic field, in a direction intersecting each of the firstto fourth magnetization directions, to the free layer. Alternatively,the magnetic field generator may be configured to apply a magneticfield, in the third magnetization direction or in the fourthmagnetization direction, to the free layer.

In the magnetic sensor device according to one embodiment of thetechnology, a deviation of the center of gravity of the element layoutarea from t center of gravity of the reference plane in a secondreference direction may be greater than a deviation of the center ofgravity of the element layout area from the center of gravity of thereference plane in a third reference direction. The second referencedirection and the third reference direction may be two directionsorthogonal to the first reference direction. The element layout area mayinclude a first area for laying out at least one magnetoresistiveelement constituting the first resistor section among the plurality ofmagnetoresistive elements, a second area for laying out at least onemagnetoresistive element constituting the second resistor section amongthe plurality of magnetoresistive elements, a third area for laying outat least one magnetoresistive element constituting the third resistorsection among the plurality of magnetoresistive elements, and a fourtharea for laying out at least one magnetoresistive element constitutingthe fourth resistor section among the plurality of magnetoresistiveelements. At least two of the first to fourth areas may be arrangedalong the third reference direction so that at least parts of therespective at least two areas sandwich a reference axis therebetweenwhen the areas are seen in the first reference direction. The referenceaxis may be a straight line parallel to the second reference directionand passing through the center of gravity of the reference plane.

If the deviation of the center of gravity of the element layout areafrom the center of gravity of the reference plane in the secondreference direction is greater than the deviation of the center ofgravity of the element layout area from the center of gravity of thereference plane in the third reference direction, the second area andthe fourth area may be arranged along the third reference direction tosandwich the reference axis therebetween when the areas are seen in thefirst reference direction. The first area may be located between thesecond area and the fourth area when the areas are seen in the firstreference direction. The third area may be located between the firstarea and the second area when the areas are seen in the first referencedirection. Alternatively, in such a case, the second area and the thirdarea may be arranged along the third reference direction to sandwich thereference axis therebetween when the areas are seen in the firstreference direction. The first area may be located between the secondarea and the third area when the areas are seen in the first referencedirection. The fourth area may be located between the first area and thethird area when the areas are seen in the first reference direction.

Alternatively, in such a case, the first area and the fourth area may bearranged along the third reference direction so that at least parts ofthe respective first and fourth areas sandwich the reference axistherebetween when the areas are seen in the first reference direction.The second area and the third area may be arranged along the thirdreference direction so that at least parts of the respective second andthird areas sandwich the reference axis therebetween when the areas areseen in the first reference direction. The second area and the thirdarea may be located forward of the first area and the fourth area,respectively, in a direction parallel to the second reference direction.In such a case, the first area and the second area may be symmetricallyarranged about a virtual straight line orthogonal to the reference axiswhen the areas are seen in the first reference direction. The third areaand the fourth area may be symmetrically arranged about the virtualstraight line when the areas are seen in the first reference direction.

If the deviation of the center of gravity of the element layout areafrom the center of gravity of the reference plane in the secondreference direction is greater than the deviation of the center ofgravity of the element layout area from the center of gravity of thereference plane in the third reference direction, at least two areas aresymmetrically arranged about the reference axis when the areas are seenin the first reference direction.

In such a case, the center of gravity of the element layout area mayoverlap the reference axis when the element layout area is seen in thefirst reference direction.

In the magnetic sensor device according to one embodiment of thetechnology, the at least one magnetic sensor may include one magneticsensor. The one magnetic sensor may be configured to detect a componentof the target magnetic field in one direction, and generate at least onedetection signal having a correspondence with the component in the onedirection. In such a case, the magnetic sensor device according to thetechnology may further include a chip including the one magnetic sensor.The chip may be mounted on the reference plane.

In the magnetic sensor device according to one embodiment of thetechnology, the at least one magnetic sensor may include two magneticsensors. The two magnetic sensors may be configured to detect componentsof the target magnetic field in two directions different from eachother. In such a case, the magnetic sensor device according to thetechnology may further include a chip including the two magneticsensors. The chip may be mounted on the reference plane. In such a case,each of the two directions of the target magnetic field may be adirection oblique to both the reference plane and the first referencedirection.

In the magnetic sensor device according to one embodiment of thetechnology, the at least one magnetic sensor may include a firstmagnetic sensor, a second magnetic sensor, and a third magnetic sensor.The first magnetic sensor may be configured to detect a component of thetarget magnetic field in a first direction. The second magnetic sensormay be configured to detect a component of the target magnetic field ina second direction. The third magnetic sensor may be configured todetect a component of the target magnetic field in a third direction.The magnetic sensor device may further include a first chip includingthe first magnetic sensor, and a second chip including the second andthird magnetic sensors. The first and second chips may be mounted on thereference plane, and arranged along a second reference directionorthogonal to the first reference direction. In such a case, the firstdirection may be a direction parallel to the reference plane. The seconddirection may be a direction oblique to both the reference plane and thefirst reference direction. The third direction may be another directionoblique to both the reference plane and the first reference direction.

A magnetic sensor system according to one embodiment of the technologyincludes the magnetic sensor device according to one embodiment of thetechnology, and a magnetic field generator that generates apredetermined magnetic field. The magnetic field generator is able tochange its relative position with respect to the magnetic sensor devicealong a predetermined spherical surface.

A manufacturing method for the magnetic sensor device according to oneembodiment of the technology includes a step of forming the at least onemagnetic sensor, and a step of mounting the at least one magnetic sensoron the support. The step of forming the at least one magnetic sensorincludes a step of forming the plurality of magnetoresistive elements.The step of forming the plurality of magnetoresistive elements includesa step of forming a plurality of initial magnetoresistive elements eachincluding an initial magnetization pinned layer to later become themagnetization pinned layer, the free layer, and the gap layer, and astep of fixing a magnetization direction of the initial magnetizationpinned layer using laser light and an external magnetic field.

In the magnetic sensor device and the magnetic sensor system accordingto one embodiment of the technology, the magnetization direction of themagnetization pinned layer and the magnetization direction of the freelayer in each of the plurality of magnetoresistive elements are definedon the assumption that the center of gravity of the element layout areais deviated from the center of gravity of the reference plane. Accordingto one embodiment of the technology, the influence of applied stress canthereby be reduced.

Other and further objects, features and advantages of the technologywill appear more fully from the following description.

In the following, some example embodiments and modification examples ofthe technology are described in detail with reference to theaccompanying drawings. Note that the following description is directedto illustrative examples of the disclosure and not to be construed aslimiting the technology. Factors including, without limitation,numerical values, shapes, materials, components, positions of thecomponents, and how the components are coupled to each other areillustrative only and not to be construed as limiting the technology.Further, elements in the following example embodiments which are notrecited in a most-generic independent claim of the disclosure areoptional and may be provided on an as-needed basis. The drawings areschematic and are not intended to be drawn to scale. Like elements aredenoted with the same reference numerals to avoid redundantdescriptions.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the disclosure and are incorporated in and constitute apart of this specification. The drawings illustrate example embodimentsand, together with the specification, serve to explain the principles ofthe technology.

FIG. 1 is a perspective view showing a schematic configuration of ajoint mechanism including a magnetic sensor system according to a firstexample embodiment of the technology.

FIG. 2 is a sectional view showing the schematic configuration of thejoint mechanism shown in FIG. 1 .

FIG. 3 is an explanatory view for describing a reference coordinatesystem in the magnetic sensor system according to the first exampleembodiment of the technology.

FIG. 4 is a perspective view showing a magnetic sensor device accordingto the first example embodiment of the technology.

FIG. 5 is a plan view showing the magnetic sensor device according tothe first example embodiment of the technology.

FIG. 6 is a side view showing the magnetic sensor device according tothe first example embodiment of the technology.

FIG. 7 is a functional block diagram showing a configuration of themagnetic sensor device according to the first example embodiment of thetechnology.

FIG. 8 is a circuit diagram showing a circuit configuration of a firstmagnetic sensor of the first example embodiment of the technology.

FIG. 9 is a circuit diagram showing a circuit configuration of a secondmagnetic sensor of the first example embodiment of the technology.

FIG. 10 is a circuit diagram showing a circuit configuration of a thirdmagnetic sensor of the first example embodiment of the technology.

FIG. 11 is a plan view showing a part of a first chip of the firstexample embodiment of the technology.

FIG. 12 is a sectional view showing a part of the first chip of thefirst example embodiment of the technology.

FIG. 13 is a plan view showing a part of a second chip of the firstexample embodiment of the technology.

FIG. 14 is a sectional view showing a part of the second chip of thefirst example embodiment of the technology.

FIG. 15 is a perspective view showing a magnetoresistive element of thefirst example embodiment of the technology.

FIG. 16 is an explanatory diagram for describing a layout of elementlayout areas of the first example embodiment of the technology.

FIG. 17 is an explanatory diagram schematically showing a stressdistribution within a support of the first example embodiment of thetechnology.

FIG. 18 is a perspective view showing a magnetoresistive element in amodification example of the first example embodiment of the technology.

FIG. 19 is a circuit diagram showing a circuit configuration of a firstmagnetic sensor of a second example embodiment of the technology.

FIG. 20 is a circuit diagram showing a circuit configuration of a secondmagnetic sensor of the second example embodiment of the technology.

FIG. 21 is a circuit diagram showing a circuit configuration of a thirdmagnetic sensor of the second example embodiment of the technology.

FIG. 22 is an explanatory diagram for describing a layout of elementlayout areas of a third example embodiment of the technology.

FIG. 23 is an explanatory diagram for describing a layout of elementlayout areas of a fourth example embodiment of the technology.

FIG. 24 is an explanatory diagram for describing a layout of elementlayout areas of a fifth example embodiment of the technology.

DETAILED DESCRIPTION

An object of the technology is to provide a magnetic sensor device and amagnetic sensor system capable of reducing the effect of applied stress.

In the following, some example embodiments of the technology aredescribed in detail with reference to the accompanying drawings. Notethat the following description is directed to illustrative examples ofthe disclosure and not to be construed as limiting the technology.Factors including, without limitation, numerical values, shapes,materials, components, positions of the components, and how thecomponents are coupled to each other are illustrative only and not to beconstrued as limiting the technology. Further, elements in the followingexample embodiments which are not recited in a most-generic independentclaim of the disclosure are optional and may be provided on an as-neededbasis. The drawings are schematic and are not intended to be drawn toscale. Like elements are denoted with the same reference numerals toavoid redundant descriptions.

First Example Embodiment

First, a joint mechanism 300 to which a magnetic sensor system 100according to the first example embodiment of the technology is appliedwill be described. The joint mechanism 300 is a mechanism including ajoint. FIG. 1 is a perspective view showing a schematic configuration ofthe joint mechanism 300. FIG. 2 is a sectional view showing theschematic configuration of the joint mechanism 300. FIG. 3 is anexplanatory view for describing a reference coordinate system in themagnetic sensor system 100.

As shown in FIGS. 1 and 2 , the joint mechanism 300 includes a firstmember 310, a second member 320, and the magnetic sensor system 100.

The first member 310 includes a shaft portion 311 and a sphericalportion 312 coupled to one longitudinal end of the shaft portion 311.The spherical portion 312 includes a convex surface 312 a. Here, a firstspherical surface being a virtual spherical surface including the convexsurface 312 a is assumed. It can be said that the convex surface 312 ais constituted of a part of the first spherical surface. A portion ofthe first spherical surface that is not included in the convex surface312 a is a border portion between the shaft portion 311 and thespherical portion 312.

The second member 320 includes a shaft portion 321 and a receptorportion 322 coupled to one longitudinal end of the shaft portion 321.The receptor portion 322 includes a concave surface 322 a. Here, asecond spherical surface being a virtual spherical surface including theconcave surface 322 a is assumed. It can be said that the concavesurface 322 a is constituted of a part of the second spherical surface.The concave surface 322 a may be constituted of one half or almost onehalf of the second, spherical surface.

With the spherical portion 312 fitted into the receptor portion 322, thefirst member 310 and the second member 320 are coupled to each othersuch that their positional relationship is changeable. The secondspherical surface has a radius slightly greater than or equal to that ofthe first spherical surface. The convex surface 312 a and the concavesurface 322 a may be in contact with each other, or opposed to eachother with a lubricant therebetween. The center of the second sphericalsurface coincides or almost coincides with that of the first sphericalsurface. The coupling portion between the first and second members 310and 320 is the joint. In the present example embodiment, the joint is aball-and-socket joint.

The magnetic sensor system 100 includes a magnetic sensor device 1 and amagnetic field generator 101. The magnetic field generator 101 is ableto change its relative position with respect to the magnetic sensordevice 1 along a predetermined spherical surface. The magnetic sensorsystem 100 is a device for detecting the relative position of themagnetic field generator 101 with respect to the magnetic sensor device1.

The magnetic field generator 101 generates a predetermined magneticfield. An example of the magnetic field generator 101 is a magnet. Themagnetic sensor device 1 generates a first detection value, a seconddetection value, and a third detection value that have correspondenceswith components in three mutually different directions of a magneticfield at a reference position. The reference position will be describedin detail later.

As shown in FIGS. 1 and 2 , the magnetic field generator 101 is embeddedin the receptor portion 322 so as not to protrude from the concavesurface 32. The magnetic sensor device 1 is located inside the sphericalportion 312. Hereinafter, the position of the center of the firstspherical surface will be referred to as a reference position. Themagnetic sensor device 1 is configured to detect a magnetic field at thereference position.

Hereinafter, a magnetic field that is a portion of the magnetic fieldgenerated by the magnetic field generator 101 and that is at thereference position will be referred to as a target magnetic field. Forexample, the direction of the target magnetic field is parallel to avirtual straight line passing through the reference position and themagnetic field generator 101. In the example shown in FIG. 2 , themagnetic field generator 101 is a magnet having an N pole and an S polearranged along the foregoing virtual straight line. The S pole islocated closer to the reference position than the N pole is. Theplurality of arrowed broken lines in FIG. 2 represent magnetic lines offorce corresponding to the magnetic field generated by the magneticfield generator 101.

The joint mechanism 300 shown in FIGS. 1 and 2 is able to change therelative position of the second member 320 with respect to the firstmember 310, with the spherical portion 312 fitted into the receptorportion 322. This allows the magnetic field generator 101 to be able tochange its relative position with respect to the magnetic sensor device1 along the foregoing predetermined spherical surface. In the presentexample embodiment, the relative position of the magnetic fieldgenerator 101 with respect to the magnetic sensor device 1 isrepresented by the position of a point closest to the reference positionon the magnetic field generator 101. The center of the predeterminedspherical surface coincides or almost coincides with the center of thefirst spherical surface. The predetermined spherical surface has aradius greater than or equal to that of the first spherical surface. Theradius of the predetermined spherical surface may coincide with that ofthe first spherical surface or that of the second spherical surface.

Now, a description will be given of a reference coordinate system in thepresent example embodiment with reference to FIG. 3 . The referencecoordinate system is an orthogonal coordinate system that is set withreference to the magnetic sensor device 1 and defined by three axes. AnX direction, a Y direction, and a Z direction are defined in thereference coordinate system. As shown in FIG. 3 , the X, Y, and Zdirections are orthogonal to each other. The opposite directions to theX. Y, and Z directions will be expressed as −X, −Y, and −Z directions,respectively.

As described above, the magnetic sensor device 1 generates the first,second, and third detection values having correspondences with thecomponents in three mutually different directions of the magnetic fieldat the reference position. In the present example embodiment,specifically, the three mutually different directions are a directionparallel to the X direction, a direction parallel to the Y direction,and a direction parallel to the Z direction. The three axes defining thereference coordinate system are an axis parallel to the X direction, anaxis parallel to the Y direction, and an axis parallel to the Zdirection.

The position of the magnetic sensor device 1 in the reference coordinatesystem remains unchanged. As the relative position of the magnetic fieldgenerator 101 with respect to the magnetic sensor device 1 changes, theposition of the magnetic field generator 101 in the reference coordinatesystem changes along the foregoing predetermined spherical surface. InFIG. 3 , the reference numeral 102 designates the predeterminedspherical surface. The position of the magnetic field generator 101 inthe reference coordinate system indicates the relative position of themagnetic field generator 101 with respect to the magnetic sensor device1. Hereinafter, the position of the magnetic field generator 101 in thereference coordinate system will be simply referred to as the positionof the magnetic field generator 101.

In the joint mechanism 300 including the magnetic sensor system 100, themagnetic sensor system 100 detects the relative position of the magneticfield generator 101 with respect to the magnetic sensor device 1,thereby enabling detection of the relative position of the second member320 with respect to the first member 310. The joint mechanism 30 may beused for robots, industrial equipment, medical equipment, amusementequipment, etc.

The magnetic sensor system 100 is applicable not only to the jointmechanism 300 but also to joysticks and trackballs.

A joystick includes, for example, a lever and a support that swingablysupports the lever. In the case of applying the magnetic sensor system100 to the joystick, for example, the magnetic field generator 101 isprovided inside the support and the magnetic sensor device 1 is providedinside the lever so that the relative position of the magnetic fieldgenerator 101 with respect to the magnetic sensor device 1 changes alonga predetermined spherical surface as the lever swings.

A trackball includes, for example, a hall and a support that rotatablysupports the ball. In the case of applying the magnetic sensor system100 to the trackball, for example, the magnetic field generator 101 isprovided inside the support and the magnetic sensor device 1 is providedinside the ball so that the relative position of the magnetic fieldgenerator 101 with respect to the magnetic sensor device 1 changes alonga predetermined spherical surface as the ball rotates.

Next, the configuration of the magnetic sensor device 1 will bedescribed with reference to FIGS. 4 to 7 . FIG. 4 is a perspective viewshowing the magnetic sensor device 1. FIG. 5 is a plan view showing themagnetic sensor device 1. FIG. 6 is a side view showing the magneticsensor device 1. FIG. 7 is a functional block diagram showing theconfiguration of the magnetic sensor device 1.

The magnetic sensor device 1 includes at least one magnetic sensor and asupport, that supports the at least one magnetic sensor. The at leastone magnetic sensor includes a plurality of magnetoresistive elementsand is configured to detect a target magnetic field that is a magneticfield to be detected. The magnetoresistive elements will hereinafter bereferred to as MR elements.

In the present example embodiment, the at least one magnetic sensorincludes a first magnetic sensor 10, a second magnetic sensor 20, and athird magnetic sensor 30. Each of the first to third magnetic sensors10, 20, and 30 includes a plurality of MR elements. The magnetic sensordevice 1 includes a first chip 2 including the first magnetic sensor 10,and a second chip 3 including the second magnetic sensor 20 and thethird magnetic sensor 30. Both the first and second chips 2 and 3 have arectangular solid shape.

The support 4 has a rectangular solid shape. The support 4 has areference plane 4 a that is a top surface, a bottom surface 4 b locatedopposite to the reference plane 4 a, and four side surfaces connectingthe reference plane 4 a and the bottom surface 4 b.

Now, a relationship of the components of the magnetic sensor device 1with the reference coordinate system will be described with reference toFIGS. 4 to 6 . As described above, the X, Y, Z, −Y, and −Z directionsare defined in the reference coordinate system. The X and Y directionsare parallel to the reference plane 4 a of the support 4. The Zdirection is perpendicular to the reference plane 4 a of the support 4,and directed from the bottom surface 4 b to the reference plane 4 a ofthe support 4. Hereinafter, the term “above” refers to positions locatedforward of a reference position in the Z direction, and “below” refersto positions opposite from the “above” positions with respect to thereference position. For each component of the magnetic sensor device 1,the term “top surface” refers to a surface of the component lying at theend thereof in the Z direction, and “bottom surface” refers to a surfaceof the component lying at the end thereof in the −Z direction.

A direction perpendicular to the reference plane 4 a (direction parallelto the Z direction) will be referred to as a first reference direction.Two directions orthogonal to the first reference direction will bereferred to as a second reference direction and a third referencedirection. In the present example embodiment, a direction parallel tothe Y direction is referred to as the second reference direction. Adirection parallel to the X direction is referred to as the thirdreference direction. The first reference direction will hereinafter bedenoted by the symbol Rz, the second reference direction by the symbolRy, and the third reference direction by the symbol Rx.

The first chip 2 has a top surface 2 a and a bottom surface 2 bpositioned opposite to each other, and four side surfaces connecting thetop surface 2 a and the bottom surface 2 b. The second chip 3 has a topsurface 3 a and a bottom surface 3 b positioned opposite to each other,and four side surfaces connecting the top surface 3 a and the bottomsurface 3 b.

The first chip 2 is mounted on the reference plane 4 a in a posture suchthat the bottom surface 2 b faces the reference plane 4 a of the support4. The second chip 3 is mounted on the reference plane 4 a in a posturesuch that the bottom surface 3 b faces the reference plane 4 a of thesupport 4. The first chip 2 and the second chip 3 are bonded to thesupport 4 with, for example, adhesives 6 and 7, respectively.

The first chip 2 has a plurality of first pads (electrode pads) 21disposed on the top surface 2 a. The second chip 3 has a plurality ofsecond pads (electrode pads) 31 disposed on the top surface 3 a. Thesupport 4 has a plurality of third pads (electrode pads) 41 disposed onthe reference plane 4 a. Although not shown, in the magnetic sensordevice 1, among the plurality of first pads 21, the plurality of secondpads 31, and the plurality of third pads 41, corresponding pairs areconnected with bonding wires.

The support 4 includes a processor 40 configured to process a pluralityof detection signals generated by the first to third magnetic sensors10, 20, and 30. For example, the processor 40 is constructed of anapplication-specific integrated circuit (ASIC). The first to thirdmagnetic sensors 10, 20, and 30 are connected to the processor 40through pads 21, 31, and 41 and the plurality of bonding wires.

A dimension in a direction perpendicular to the reference plane 4 a isreferred to as thickness. As shown in FIG. 6 , the thickness of thefirst chip 2 and the thickness of the second chip 3 are the same. Thethickness of the support 4 is greater than the thickness of the firstchip 2 and the thickness of the second chip 3.

Next, referring to FIGS. 8 to 14 , the configuration of the first tothird magnetic sensors 10, 20, and 30 will be described. FIG. 8 is acircuit diagram showing the circuit configuration of the first magneticsensor 10. FIG. 9 is a circuit diagram showing the circuit configurationof the second magnetic sensor 20. FIG. 10 is a circuit diagram showingthe circuit configuration of the third magnetic sensor 30. FIG. 11 is aplan view showing a part of the first chip 2. FIG. 12 is a sectionalview showing a part of the first chip 2. FIG. 13 is a plan view showinga part of the second chip 3. FIG. 14 is a sectional view showing a partof the second chip 3. FIG. 14 shows a part of the cross section at theposition indicated by line 14-14 in FIG. 13 .

Here, a first direction, a second direction, and a third direction aredefined as follows. The first direction is a direction parallel to thereference plane 4 a. The second direction is a direction oblique to boththe reference plane 4 a and the first reference direction Rz. The thirddirection is another direction oblique to both the reference plane 4 aand the first reference direction Rz. The second direction is orthogonalto the first direction. The third direction is also orthogonal to thefirst direction too.

As shown in FIGS. 11 and 13 , a U direction and a V direction aredefined as follows. The U direction is a direction rotated from the Xdirection to the −Y direction. The V direction is a direction rotatedfrom the Y direction to the X direction. More specifically, in thepresent example embodiment, the U direction is set to a directionrotated from the X direction to the −Y direction by α, and the Vdirection is set to a direction rotated from the Y direction to the Xdirection by α. Note that α is an angle greater than 0° and smaller than90°. −U direction refers to a direction opposite to the U direction, and−V direction refers to a direction opposite to the V direction.

As shown in FIG. 14 , a W1 direction and a W2 direction are defined asfollows. The W1 direction is a direction rotated from the V direction tothe −Z direction. The W2 direction is a direction rotated from the Vdirection to the Z direction. More specifically, in the present exampleembodiment, the W1 direction is set to a direction rotated from the Vdirection to the −Z direction by β, and the W2 direction is set to adirection rotated from the V direction to the Z direction by β. Notethat is an angle greater than 0° and smaller than 90°. −W1 directionrefers to a direction opposite to the W1 direction, and −W2 directionrefers to a direction opposite to the W2 direction. Both the W1direction and the W2 direction are orthogonal to the U direction.

In the present example embodiment, the first direction is a directionparallel to the U direction. The second direction is a directionparallel to the W1 direction. The third direction is a directionparallel to the W2 direction.

The first magnetic sensor 10 is configured to detect a first componentof the target magnetic field and generate at least one first detectionsignal having a correspondence with the first component. The firstcomponent is a component of the target magnetic field in the firstdirection (direction parallel to the U direction).

The second magnetic sensor 20 is configured to detect a second componentof the target magnetic field and generate at least one second detectionsignal having a correspondence with the second component. The secondcomponent is a component of the target magnetic field in the seconddirection (direction parallel to the W1 direction).

The third magnetic sensor 30 is configured to detect a third componentof the target magnetic field and generate at least one third detectionsignal having a correspondence with the third component. The thirdcomponent is a component of the target magnetic field in the thirddirection (direction parallel to the W2 direction).

As shown in FIG. 8 , the first magnetic sensor 10 includes a powersupply port V1, a ground port G1, signal output ports E11 and E12, afirst resistor section R11, a second resistor section R12, a thirdresistor section R13, and a fourth resistor section R14. The pluralityof MR elements of the first magnetic sensor 10 constitute the first tofourth resistor sections R11, R12, R13, and R14. The first and secondresistor sections R11 and R12 are connected in series in a first path(left path in FIG. 8 ) that electrically connects a first connectionpoint P11 and a second connection point P12. The third and fourthresistor sections R13 and R14 are connected in series in a second path(right path in FIG. 8 ) that electrically connects the first connectionpoint P11 and the second connection point P12.

The first and fourth resistor sections R11 and R14 are connected to thefirst connection point P11. The second and third resistor sections R12and R13 are connected to the second connection point P12. The firstconnection point P11 is connected to the power supply port V1. Thesecond connection point P12 is connected to the ground port G1. Theconnection point between the first resistor section R11 and the secondresistor section R12 is connected to the signal output port E11. Theconnection point between the third resistor section R13 and the fourthresistor section R14 is connected to the signal output port E12.

As shown in FIG. 9 , the second magnetic sensor 20 includes a powersupply port V2, a ground port G2, signal output ports E21 and E22, afirst resistor section R21, a second resistor section R22, a thirdresistor section R23, and a fourth resistor section R24. The pluralityof MR elements of the second magnetic sensor 20 constitute the first tofourth resistor sections R21, R22, R23, and R24.

The second magnetic sensor 20 has basically the same circuitconfiguration as that of the first magnetic sensor 10. The descriptionof the circuit configuration of the first magnetic sensor 10 applies tothe circuit configuration of the second magnetic sensor 20 if the powersupply port V1, the ground port G1, the signal output ports E11 and E12,the resistor sections R11, R12, R13, and R14, and the connection pointsP11 and P12 in the description are replaced with a power supply port V2,a ground port G2, signal output ports E21 and E22, resistor sectionsR21, R22, R23, and R24, and connection points P21 and P22, respectively.

As shown in FIG. 10 , the third magnetic sensor 30 includes a powersupply port V3, a ground port G3, signal output ports E31 and E32, afirst resistor section R31, a second resistor section R32, a thirdresistor section R33, and a fourth resistor section R34. The pluralityof MR elements of the third magnetic sensor 30 constitute the first tofourth resistor sections R31, R32, R33, and R34.

The third magnetic sensor 30 has basically the same circuitconfiguration as that of the first magnetic sensor 10. The descriptionof the circuit configuration of the first magnetic sensor 10 applies tothe circuit configuration of the third magnetic sensor 30 if the powersupply port V1, the ground port G1, the signal output ports E11 and E12,the resistor sections R11, R12, R13, and R14, and the connection pointsP11 and P12 in the description are replaced with a power supply port V3,a ground port G3, signal output ports E31 and E32, resistor sectionsR31, R32, R33, and R34, and connection points P31 and P32, respectively.

The plurality of MR elements of the first magnetic sensor 10 willhereinafter be referred to as a plurality of first MR elements 50A, theplurality of MR elements of the second magnetic sensor 20 a plurality ofsecond MR elements 50B, and the plurality of MR elements of the thirdmagnetic sensor 30 a plurality of third MR elements 50C. Any given MRelement will be denoted by the reference numeral 50.

FIG. 15 is a perspective view showing an MR element 50. The MR element50 is a spin-valve MR element. The MR element 50 includes amagnetization pinned layer 52 having magnetization whose direction isfixed, a free layer 54 having magnetization whose direction is variabledepending on the direction of an external magnetic field, and a gaplayer 53 located between the magnetization pinned layer 52 and the freelayer 54. The MR element 50 may be a tunneling magnetoresistive (TMR)element or a giant magnetoresistive (GMR) element. In the TMR element,the gap layer 53 is a tunnel barrier layer. In the GMR element, the gaplayer 53 is a nonmagnetic conductive layer. The resistance of the MRelement 50 changes with the angle that the magnetization direction ofthe free layer 54 forms with respect to the magnetization direction ofthe magnetization pinned layer 52. The resistance of the MR element 50is at its minimum value when the foregoing angle is 0°, and at itsmaximum value when the foregoing angle is 180°. In each MR element 50,the free layer 54 has a shape anisotropy that sets the direction of themagnetization easy axis to be orthogonal to the magnetization directionof the magnetization pinned layer 52. As a method for setting themagnetization easy axis in a predetermined direction in the free layer54, a magnet configured to apply a bias magnetic field to the free layer54 can be used.

The MR element 50 further includes an antiferromagnetic layer 51. Theantiferromagnetic layer 51, the magnetization pinned layer 52, the gaplayer 53, and the free layer 54 are stacked in this order. Theantiferromagnetic layer 51 is formed of an antiferromagnetic material,and is in exchange coupling with the magnetization pinned layer 52 tothereby pin the magnetization direction of the magnetization pinnedlayer 52. The magnetization pinned layer 52 may be a so-calledself-pinned layer (Synthetic Ferri Pinned layer, SFP layer). Theself-pinned layer has a stacked ferri structure in which a ferromagneticlayer, a nonmagnetic intermediate layer, and a ferromagnetic layer arestacked, and the two ferromagnetic layers are antiferromagneticallycoupled. In a case where the magnetization pinned layer 52 is theself-pinned layer, the antiferromagnetic layer 51 may be omitted.

It should be appreciated that the layers 51 to 54 of each MR element 50may be stacked in the reverse order to that shown in FIG. 15 .

In FIGS. 8 to 10 , the solid arrows represent the magnetizationdirections of the magnetization pinned layers 52 of the MR elements 50.The hollow arrows represent the magnetization directions of the freelayers 54 of the MR elements 50 when the target magnetic field is notapplied to the MR elements 50.

A first magnetization direction, a second magnetization direction, athird magnetization direction, and a fourth magnetization direction willbe defined as follows. The first magnetization direction is a directionintersecting the first reference direction Rz. The second magnetizationdirection is a direction intersecting the first reference direction Rzand opposite to the first magnetization direction. The thirdmagnetization direction is a direction intersecting the first referencedirection Rz and orthogonal to the first magnetization direction. Thefourth magnetization direction is a direction intersecting the firstreference direction Rz and opposite to the third magnetizationdirection.

In the present example embodiment, the first magnetization directionintersects the second reference direction Ry. The angle that the firstmagnetization direction forms with respect to the second referencedirection Ry may be in the range greater than 0° and less than 90°.

In the first magnetic sensor 10, the first magnetization direction isthe U direction, the second magnetization direction is the −U direction,the third magnetization direction is the V direction, and the fourthmagnetization direction is the −V direction. In the example shown inFIG. 8 , the magnetization of the magnetization pinned layer 52 in eachof the first and third resistor sections R11 and R13 includes acomponent in the first magnetization direction (U direction). Themagnetization of the magnetization pinned layer 52 in each of the secondand fourth resistor sections R12 and R14 includes a component in thesecond magnetization direction (−U direction).

The magnetization of the free layer 54 in each of two of the first tofourth resistor sections R11, R12, R13, and R14 includes a component inthe third magnetization direction (V direction) when the target magneticfield is not applied to the first magnetic sensor 10. The magnetizationof the free layer 54 in each of the other two of the first to fourthresistor sections R11, R12, R13, and R14 includes a component in thefourth magnetization direction (−V direction) when the target magneticfield is not applied to the first magnetic sensor 10. In the exampleshown in FIG. 8 , the magnetization of the free layer 54 in each of thefirst and second resistor sections R11 and R12 includes a component inthe third magnetization direction (V direction) in the foregoing case.The magnetization of the free layer 54 in each of the third and fourthresistor sections R13 and R14 includes a component in the fourthmagnetization direction (−V direction) in the foregoing case.

If the magnetization of a magnetization pinned layer 52 includes acomponent in a specific magnetization direction, the component in thespecific magnetization direction may be the main component of themagnetization of the magnetization pinned layer 52. Alternatively, themagnetization of the magnetization pinned layer 52 may be free of acomponent in the direction orthogonal to the specific magnetizationdirection. In the present example embodiment, if the magnetization of amagnetization pinned layer 52 includes a component in a specificmagnetization direction, the magnetization direction of themagnetization pinned layer 52 is the same or substantially the same asthe specific magnetization direction.

Similarly, if the magnetization of a free layer 54 when the targetmagnetic field is not applied to the free layer 54 includes a componentin a specific magnetization direction, the component in the specificmagnetization direction may be the main component of the magnetizationof the free layer 54. Alternatively, the magnetization of the free layer54 in the foregoing case may be free of a component in a directionorthogonal to the specific magnetization direction. In the presentexample embodiment, if the magnetization of the free layer 54 in theforegoing case includes a component in a specific magnetizationdirection, the magnetization direction of the free layer 54 in theforegoing case is the same or substantially the same as the specificmagnetization direction.

The first magnetic sensor 10 is configured so that the free layers 54are magnetized in the foregoing respective directions when the targetmagnetic field is not applied to the first magnetic sensor 10.Specifically, the free layer 54 in each of the plurality of first MRelements 50A of the first magnetic sensor 10 has a shape anisotropy thatsets the direction of the magnetization easy axis to a directionparallel to the third magnetization direction (V direction). Thedirection parallel to the third magnetization direction (V direction) isalso parallel to the fourth magnetization direction (−V direction).

The first magnetic sensor 10 also includes the magnetic field generatorconfigured to apply to the free layers 54 a magnetic field in adirection intersecting each of the first to fourth magnetizationdirections. In the present example embodiment, the magnetic fieldgenerator includes a coil. The specific direction of the magnetic fieldgenerated by the coil will be described later.

In the second magnetic sensor 20, the first magnetization direction isthe W1 direction, the second magnetization direction is the −W1direction, the third magnetization direction is the U direction, and thefourth magnetization direction is the −U direction. The description ofthe magnetization directions of the magnetization pinned layers 52 andthe magnetization directions of the free layers 54 in the first magneticsensor 10 applies to the magnetization directions of the magnetizationpinned layers 52 and the magnetization directions of the free layers 54in the second magnetic sensor 20 if the first magnetic sensor 10, theresistor sections R11, R12, R13, and R14, the U direction, the −Udirection, the V direction, and the −V direction in the description arereplaced with the second magnetic sensor 20, the resistor sections R21,R22, R23, and R24, the W1 direction, the −W1 direction, the U direction,and the −U direction, respectively.

In the third magnetic sensor 30, the first magnetization direction isthe W2 direction, the second magnetization direction is the −W2direction, the third magnetization direction is the U direction, and thefourth magnetization direction is the −U direction. The description ofthe magnetization directions of the magnetization pinned layers 52 andthe magnetization directions of the free layers 54 in the first magneticsensor 10 applies to the magnetization directions of the magnetizationpinned layers 52 and the magnetization directions of the free layers 54in the third magnetic sensor 30 if the first magnetic sensor 10, theresistor sections R11, R12, R13, and R14, the U direction, the −Udirection, the V direction, and the −V direction in the description arereplaced with the third magnetic sensor 30, the resistor sections R31,R32, R33, and R34, the W2 direction, the −W2 direction, the U direction,and the −U direction, respectively.

As shown in FIGS. 11 and 12 , the first chip 2 includes a substrate 22,insulating layers 23, 24, 25, 26, 27, 28, and 65A, a plurality of lowerelectrodes 61A, a plurality of upper electrodes 62A, a plurality oflower coil elements 63A, and a plurality of upper coil elements 64A. Thecoil elements are a part of the coil winding. The insulating layer 23 isdisposed on the substrate 22. The plurality of lower coil elements 63Aare disposed on the insulating layer 23. The insulating layer 65A isdisposed around the lower coil elements 63A on the insulating layer 23.The insulating layer 24 is disposed on the plurality of lower coilelements 63A and the insulating layer 65A. The plurality of lowerelectrodes 61A are disposed on the insulating layer 24. The insulatinglayer 25 is disposed around the lower electrodes 61A on the insulatinglayer 24.

The plurality of first MR elements 50A are disposed on the plurality oflower electrodes 61A. The insulating layer 26 is disposed around thefirst MR elements 50A on the lower electrodes 61A and the insulatinglayer 25. The plurality of upper electrodes 62A are disposed on theplurality of first MR elements 50A and the insulating layer 26. Theinsulating layer 27 is disposed around the upper electrodes 62A on theinsulating layer 26. The insulating layer 28 is disposed on theplurality of upper electrodes 62A and the insulating layer 27. Theplurality of upper coil elements 64A are disposed on the insulatinglayer 28. The first chip 2 may further include a not-shown insulatinglayer that covers the plurality of upper coil elements 64A and theinsulating layer 28. In FIG. 11 , the plurality of lower electrodes 61A,the plurality of upper electrodes 62A, the plurality of lower coilelements 63A, and the insulating layers 23 to 28 and 65A are omitted.

In the state of mounting the first chip 2 on the reference plane 4 a ofthe support 4 (refer to FIGS. 4 to 6 ), a top surface of the substrate22 is parallel to the reference plane 4 a. In the foregoing state, a topsurface of each of the plurality of lower electrodes 61A is alsoparallel to the reference plane 4 a. Thus, it can be said that, in theforegoing state, the plurality of first MR elements 50A are disposed ona flat surface parallel to the reference plane 4 a.

As shown in FIG. 11 , the plurality of first MR elements 50A aredisposed so that two or more MR elements 50A are arranged both in the Udirection and in the V direction. Each of the plurality of upper coilelements 64A extends in a direction parallel to the Y direction. Theplurality of upper coil elements 64A are arranged in the X direction.When seen in the first reference direction Rz, two upper coil elements64A overlap each of the plurality of first MR elements 50A. Although notshown in the drawings, the shape and arrangement of the plurality oflower coil elements 63A may be the same as or different from those ofthe plurality of upper coil elements 64A.

In the example shown in FIGS. 11 and 12 , the plurality of lower coilelements 63A and the plurality of upper coil elements 64A areelectrically connected, to constitute a coil that applies a magneticfield in the X direction and a magnetic field in the −X direction to thefree layers 54 in the plurality of first MR elements 50A. The coil isconfigured so that the magnetic field in the X direction can be appliedto either of the free layers 54 in each of the first and second resistorsections R11 and R12 or the free layers 54 in each of the third andfourth resistor sections R13 and R14, and the magnetic field in the −Xdirection can be applied to the other of the free layers 54.

The directions of the magnetic fields generated by the coil and appliedto the free layers 54 intersect each of the first to fourthmagnetization directions (U direction, −U direction, V direction, and −Vdirection) of the first magnetic sensor 10. In particular, in theexample shown in FIGS. 11 and 12 , the directions of the magnetic fieldsapplied to the free layers 54 are oblique at 45° with respect to boththe direction parallel to the first magnetization direction (Udirection) and the direction parallel to the third magnetizationdirection (V direction).

Each lower electrode 61A has a long slender shape. Two lower electrodes61A adjoining in the longitudinal direction of the lower electrodes 61Ahave a gap therebetween. First MR elements 50A are disposed near bothlongitudinal ends on the top surface of each lower electrode 61A. Eachupper electrode 62A has a long slender shape, and electrically connectstwo adjoining first MR elements 50A that are disposed on two lowerelectrodes 61A adjoining in the longitudinal direction of the lowerelectrodes 61A.

As shown in FIGS. 13 and 14 , the second chip 3 includes a substrate 32,insulating layers 33, 34, 35, 36, 37, 38, 39, and 65B, a plurality oflower electrodes 61B, a plurality of lower electrodes 61C, a pluralityof upper electrode 62B, a plurality of upper electrodes 62C, a pluralityof lower coil elements 63B, and a plurality of upper coil elements 64B.The insulating layer 33 is disposed on the substrate 32. The pluralityof lower coil elements 63B are disposed on the insulating layer 33. Theinsulating layer 65B is disposed around the lower coil elements 63B onthe insulating layer 33. The insulating layer 34 is disposed on thelower coil elements 63B and the insulating layer 65B. The insulatinglayer 35 is disposed on the substrate 34. The plurality of lowerelectrodes 61B and the plurality of lower electrodes 61C are disposed onthe insulating layer 35. The insulating layer 36 is disposed around thelower electrodes 61B and the lower electrodes 61C on the insulatinglayer 35.

The plurality of second MR elements 50B are disposed on the plurality oflower electrodes 61B. The plurality of third MR elements 50C aredisposed on the plurality of lower electrodes 61C. The insulating layer37 is disposed around the second MR elements 50B and the third MRelements 50C on the lower electrodes 61B, the lower electrodes 61C, andthe insulating layer 36. The plurality of upper electrodes 62B aredisposed on the plurality of second MR elements 50B and the insulatinglayer 37. The insulating layer 38 is disposed around the plurality ofupper electrodes 62B and the plurality of upper electrodes 62C on theinsulating layer 37. The plurality of upper electrodes 62C are disposedon the plurality of third MR elements 50C and the insulating layer 37.The insulating layer 39 is disposed on the plurality of upper electrodes62B, the plurality of upper electrodes 62C, and the insulating layer 38.The plurality of upper coil elements 64B are disposed on the insulatinglayer 39. The second chip 3 may further include a not-shown insulatinglayer that covers the plurality of upper coil elements 64B and theinsulating layer 39. In FIG. 13 , the plurality of lower electrodes 61B,the plurality of lower electrodes 61C, the plurality of upper electrodes62B, the plurality of upper electrodes 62C, the plurality of lower coilelements 63B, and the insulating layers 33 to 39 are omitted.

In the state of mounting the second chip 3 on the reference plane 4 a ofthe support 4 (refer to FIGS. 4 to 6 ), a top surface of the substrate32 is parallel to the reference plane 4 a. The insulating layer 35 has aplurality of groove sections 35 c. Each of the plurality of groovesections 35 c has an inclined surface 35 a and an inclined surface 35 bthat are inclined with respect to the top surface of the substrate 32.The plurality of lower electrodes 61B are disposed on each of theinclined surfaces 35 a of the plurality of groove sections 35 c. Theplurality of lower electrodes 61C are disposed on each of the inclinedsurfaces 35 b of the plurality of the groove sections 35 c. In theforegoing state, a top surface of each of the plurality of lowerelectrodes 61B and a top surface of each of the plurality of lowerelectrodes 61C are also inclined with respect to the reference plane 4a. Thus, it can be said that, in the foregoing state, the plurality ofsecond MR elements 50B and the plurality of third MR elements 50C aredisposed on inclined surfaces that are inclined with respect to thereference plane 4 a.

As shown in FIG. 13 , the plurality of second MR elements 50B aredisposed so that two or more MR elements 50B are arranged both in the Udirection and in the V direction. Similarly, the plurality of third MRelements 50C are disposed so that two or more MR elements 50C arearranged both in the U direction and in the V direction. In the presentexample embodiment, the second MR elements 50B and the third MR elements50C are alternately arranged in the V direction.

Each of the plurality of upper coil elements 64B extends in a directionparallel to the Y direction. The plurality of upper coil elements 64Bare arranged in the X direction. When seen in the first referencedirection Rz, two upper coil elements 64B overlap each of the pluralityof second MR elements 50B and the plurality of third MR elements 50C.Although not shown in the drawings, the shape and arrangement of theplurality of lower coil elements 63B may be the same as or differentfrom those of the plurality of upper coil elements 64B.

In the example shown in FIGS. 13 and 14 , the plurality of lower coilelements 63B and the plurality of upper coil elements 64B areelectrically connected, to constitute a coil that applies a magneticfield in the X direction and a magnetic field in the −X direction to thefree layers 54 in the plurality of second MR elements 50B and the freelayers 54 in the plurality of third MR elements 50C. The coil isconfigured so that the magnetic field in the X direction can be appliedto either of the free layers 54 in each of the first and second resistorsections R21 and R22 of the second magnetic sensor 20 and the first andsecond resistor sections R31 and R32 of the third magnetic sensor 30 orthe free layers 54 in each of the third and fourth resistor sections R23and R24 of the second magnetic sensor 20 and the third and fourthresistor sections R33 and R34 of the third magnetic sensor 30, and themagnetic field in the −X direction can be applied to the other of thefree layers 54.

The directions of the magnetic fields generated by the coil and appliedto the free layers 54 in the second magnetic sensor 20 intersect each ofthe first to fourth magnetization directions (W1 direction, −W1direction, U direction, and −U direction) of the second magnetic sensor20. In particular, in the example shown in FIGS. 13 and 14 , thedirections of the magnetic fields applied to the free layers 54 in thesecond magnetic sensor 20 are oblique at 45° with respect to both thedirection parallel to the first magnetization direction (W1 direction)and the direction parallel to the third magnetization direction (Udirection) of the second magnetic sensor 20.

Similarly, the directions of the magnetic fields generated by the coiland applied to the free layers 54 in the third magnetic sensor 30intersect each of the first to fourth magnetization directions (W2direction, −W2 direction, U direction, and −U direction) of the thirdmagnetic sensor 30. In particular, in the example shown in FIGS. 13 and14 , the directions of the magnetic fields applied to the free layers 54in the third magnetic sensor 30 are oblique at 45° with respect to boththe direction parallel to the first magnetization direction (W2direction) and the direction parallel to the third magnetizationdirection (U direction) of the third magnetic sensor 30.

Each lower electrode 61B has a long slender shape. Two lower electrodes61B adjoining in the longitudinal direction of the lower electrodes 61Bhave a gap therebetween. Second MR elements 50B are disposed near bothlongitudinal ends on the top surface of each lower electrode 61B. Eachupper electrode 62B has a long slender shape, and electrically connectstwo adjoining second MR elements 50B that are disposed on two lowerelectrodes 61B adjoining in the longitudinal direction of the lowerelectrodes 61B.

Each lower electrode 61C has a long slender shape. Two lower electrodes61C adjoining in the longitudinal direction of the lower electrodes 61Chave a gap therebetween. Third MR elements 50C are disposed near bothlongitudinal ends on the top surface of each lower electrode 61C. Eachupper electrode 62C has a long slender shape, and electrically connectstwo adjoining third MR elements 50C that are disposed on two lowerelectrodes 61C adjoining in the longitudinal direction of the lowerelectrodes 61C.

Next, the first to third detection signals will be described withreference to FIGS. 8 to 10 . As the strength of the component of thetarget magnetic field in the first direction (direction parallel to theU direction), i.e., the first component changes, the resistance of eachof the resistor sections R11 to R14 of the first magnetic sensor 10changes either so that the resistances of the resistor sections R11 andR13 increase and the resistances of the resistor sections R12 and R14decrease or so that the resistances of the resistor sections R11 and R13decrease and the resistances of the resistor sections R12 and R14increase. Thereby the electric potential of each of the signal outputports E11 and E12 changes. The first magnetic sensor 10 generates asignal corresponding to the electric potential of the signal output portE11 as a first detection signal S11, and generates a signalcorresponding to the electric potential of the signal output port E12 asa first detection signal S12.

As the strength of the component of the target magnetic field in thesecond direction (direction parallel to the W1 direction), i.e., thesecond component changes, the resistance of each of the resistorsections R21 to R24 of the second magnetic sensor 20 changes either sothat the resistances of the resistor sections R21 and R23 increase andthe resistances of the resistor sections R22 and R24 decrease or so thatthe resistances of the resistor sections R21 and R23 decrease and theresistances of the resistor sections R22 and R24 increase. Thereby theelectric potential of each of the signal output ports E21 and E22changes. The second magnetic sensor 20 generates a signal correspondingto the electric potential of the signal output port E21 as a seconddetection signal S21, and generates a signal corresponding to theelectric potential of the signal output port E22 as a second detectionsignal S22.

As the strength of the component of the target magnetic field in thethird direction (direction parallel to the W2 direction), i.e., thethird component changes, the resistance of each of the resistor sectionsR31 to R34 of the third magnetic sensor 30 changes either so that theresistances of the resistor sections R31 and R33 increase and theresistances of the resistor sections R32 and R34 decrease or so that theresistances of the resistor sections R31 and R33 decrease and theresistances of the resistor sections R32 and R34 increase. Thereby theelectric potential of each of the signal output ports E31 and E32changes. The third magnetic sensor 30 generates a signal correspondingto the electric potential of the signal output port E31 as a thirddetection signal S31, and generates a signal corresponding to theelectric potential of the signal output port E32 as a third detectionsignal S32.

Next, the operation of the processor 40 will be described. The processor40 generates a first detection value Su corresponding to the firstcomponent (component in the direction parallel to the U direction) ofthe target magnetic field based on the first detection signals S11 andS12. In the present example embodiment, the processor 40 generates thefirst detection value Su by an arithmetic including obtainment of thedifference S11-S12 between the first detection signal S11 and the firstdetection signal S12. The first detection value Su may be the differenceS11-S12 itself, or may be a result of a predetermined correction, suchas a gain adjustment or an offset adjustment, made to the differenceS11-S12.

The processor 40 generates a second detection value and a thirddetection value based on the second detection signals S21 and S22 andthe third detection signals S31 and S32. The second detection value is adetection value corresponding to a component of the target magneticfield in a direction that is parallel to the reference plane 4 a andorthogonal to the first direction (direction parallel to the Udirection). In the present example embodiment, as the second detectionvalue, the processor 40 generates a detection value corresponding to thecomponent of the target magnetic field in a direction parallel to the Vdirection. The third detection value is a detection value correspondingto a component of the target magnetic field in a direction perpendicularto the reference plane 4 a, i.e., a component in a direction parallel tothe Z direction. The second detection value is represented by a symbolSv, and the third detection value is represented by a symbol Sz.

The processor 40 generates the second and third detection values Sy andSz as follows, for example. First, the processor 40 generates a value S2by an arithmetic including obtainment of the difference S21-S22 betweenthe second detection signal S21 and the second detection signal S22, andgenerates a value S3 by an arithmetic including obtainment of thedifference S31-S32 between the third detection signal S31 and the thirddetection signal S32. Next, the processor 40 calculates values S3 and S4using the following expressions (1) and (2).S3=(S2+S1)/cos α  (1)S4=(S2−S1)/sin α  (2)

The second detection value Sv may be the value S3 itself, or may be aresult of a predetermined correction, such as a gain adjustment or anoffset adjustment, made to the value S3. In the same manner, the thirddetection value Sz may be the value S4 itself, or may be a result of apredetermined correction, such as a gain adjustment or an offsetadjustment, made to the value S4.

As described above, the U direction is a direction rotated from the Xdirection to the −Y direction by a. The first detection value Sutherefore also has a correspondence with the component of the targetmagnetic field in the direction parallel to the X direction. The Vdirection is a direction rotated from the Y direction to the X directionby α. The second detection value Sv therefore also has a correspondencewith the component of the target magnetic field in the directionparallel to the Y direction. The processor 40 may generate a detectionvalue corresponding to the component of the target magnetic field in thedirection parallel to the X direction based on the first detectionsignals S11 and S12 or the first detection value Su. Similarly, theprocessor 40 may generate a detection value corresponding to thecomponent of the target magnetic field in the direction parallel to theY direction based on the second detection signals S21 and S22 and thethird detection signals S31 and S32 or the second detection value Sv.

Next, referring to FIG. 16 , the structural features of the magneticsensor device 1 will be described. FIG. 16 is an explanatory diagram fordescribing the layout of element layout areas.

The features of the first magnetic sensor 10 will initially bedescribed. The first magnetic sensor 10 includes an element layout areafor laying out the plurality of first MR elements 50A. The elementlayout area for laying out the plurality of first MR elements 50A willhereinafter be referred to as the element layout area of the firstmagnetic sensor 10. In the present example embodiment, the firstmagnetic sensor 10 is included in the first chip 2. The element layoutarea of the first magnetic sensor 10 is thus also included in the firstchip 2. The element layout area of the first magnetic sensor 10 may belocated inside the first chip 2 or at the surface of the first chip 2.In the present example embodiment, a part or all of the top surface 2 aof the first chip 2 is the element layout area of the first magneticsensor 10. The following description will be given by using a case wherethe entire top surface 2 a of the first chip 2 is the element layoutarea of the first magnetic sensor 10, as an example.

In FIG. 16 , a point denoted by the symbol C2 represents the center ofgravity of the top surface 2 a of the first chip 2, i.e., the elementlayout area of the first magnetic sensor 10 when seen in the firstreference direction Rz. A point denoted by the symbol C4 represents thecenter of gravity of the reference plane 4 a of the support 4 when seenin the first reference direction Rz. As shown in FIG. 16 , when seen inthe first reference direction Rz, the center of gravity C2 of theelement layout area of the first magnetic sensor 10 is deviated from thecenter of gravity C4 of the reference plane 4 a. In the present exampleembodiment, the deviation of the center of gravity C2 from the center ofgravity C4 in the second reference direction Ry is greater than thedeviation of the center of gravity C2 from the center of gravity C4 inthe third reference direction Rx.

In FIG. 16 , a straight line denoted by Ra represents a straight linethat passes through the center of gravity C4 and is parallel to thesecond reference direction Ry. This straight line will hereinafter bereferred to as a reference axis Ra. In the present example embodiment,the center of gravity C2 overlaps the reference axis Ra when seen in thefirst reference direction Rz.

The element layout area of the first magnetic sensor 10 includes a firstarea A21, a second area A22, a third area A23, and a fourth area A24.The first area A21 is an area for laying out at least one first MRelement 50A constituting the first resistor section R11 among theplurality of first MR elements 50A. The second area A22 is an area forlaying out at least one first MR element 50A constituting the secondresistor section R12 among the plurality of first MR elements 50A. Thethird area A23 is an area for laying out at least one first MR element50A constituting the third resistor section R13 among the plurality offirst MR elements 50A. The fourth area A24 is an area for laying out atleast one first MR element 50A constituting the fourth resistor sectionR14 among the plurality of first MR elements 50A.

At least two of the first to fourth areas A21, A22, A23, and A24 arearranged along the third reference direction Rx so that at least partsof the respective at least two areas sandwich the reference axis Ratherebetween when seen in the first reference direction Rz. In thepresent example embodiment, the second area A22 and the fourth area A24are arranged along the third reference direction Rx to sandwich thereference axis Ra therebetween when seen in the first referencedirection Rz. The first area A21 is located between the second area A22and the fourth area A24 when seen in the first reference direction Rz.The third area A23 is located between the first area A21 and the secondarea A22 when seen in the first reference direction Rz. In the exampleshown in FIG. 16 , the first area A21 and the third area A23 are alsoarranged along the third reference direction Rx to sandwich thereference axis Ra therebetween when seen in the first referencedirection Rz.

In the present example embodiment, the second area A22 and the fourtharea A24 are symmetrically arranged about the reference axis Ra whenseen in the first reference direction Rz. The first area A21 and thethird area A23 are symmetrically arranged about the reference axis Rawhen seen in the first reference direction Rz.

If the entire top surface 2 a of the first chip 2 is the element layoutarea of the first magnetic sensor 10, the element layout area mayinclude an area for laying out the plurality of first pads 21. If a partof the top surface 2 a of the first chip 2 is the element layout area ofthe first magnetic sensor 10, the element layout area may or may notinclude the area for laying out the plurality of first pads 21.

Next, the features of the second and third magnetic sensors 20 and 30will be described. The second magnetic sensor 20 includes an elementlayout area for laying out the plurality of second MR elements 50B. Thethird magnetic sensor 30 includes an element layout area for laying outthe plurality of third MR elements 50C. In the present exampleembodiment, the second and third magnetic sensors 20 and 30 are includedin the second chip 3. The element layout area for laying out theplurality of second MR elements 50B and the element layout area forlaying out the plurality of third MR elements 50C are therefore alsoincluded in the second chip 3. In the present example embodiment, acommon element layout area is used as the element layout area for layingout the plurality of second MR elements 50B and the element layout areafor laying out the plurality of third MR elements 50C. The commonelement layout area will hereinafter be referred to also as an elementlayout area of the second and third magnetic sensors 20 and 30.

The element layout area of the second and third magnetic sensors 20 and30 may be located inside the second chip 3 or at the surface of thesecond chip 3. In the present example embodiment, a part or all of thetop surface 3 a of the second chip 3 is the element layout area of thesecond and third magnetic sensors 20 and 30. The following descriptionwill be given by using a case where the entire top surface 3 a of thesecond chip 3 is the element layout area of the second and thirdmagnetic sensors 20 and 30 as an example.

In FIG. 16 , a point denoted by the symbol C3 represents the center ofgravity of the top surface 3 a of the second chip 3, i.e., the center ofgravity of the element layout area of the second and third magneticsensors 20 and 30 when seen in the first reference direction Rz. Asshown in FIG. 16 , when seen in the first reference direction Rz, thecenter of gravity C3 of the element layout area of the second and thirdmagnetic sensors 20 and 30 is deviated from the center of gravity C4 ofthe reference plane 4 a. In the present example embodiment, thedeviation of the center of gravity C3 from the center of gravity C4 inthe second reference direction Ry is greater than the deviation of thecenter of gravity C3 from the center of gravity C4 in the thirdreference direction Rx. In the present example embodiment, the center ofgravity C3 overlaps the reference axis Ra when seen in the firstreference direction Rz.

The element layout area for laying out the plurality of second MRelements 50B includes a first area, a second area, a third area, and afourth area. The first area is an area for laying out at least onesecond MR element 50B constituting the first resistor section R21 amongthe plurality of second MR elements 50B. The second area is an area forlaying out at least one second MR element 50B constituting the secondresistor section R22 among the plurality of second MR elements 50B. Thethird area is an area for laying out at least one second MR element 50Bconstituting the third resistor section R23 among the plurality ofsecond MR elements 50B. The fourth area is an area for laying out atleast one second MR element 50B constituting the fourth resistor sectionR24 among the plurality of second MR elements 50B.

The element layout area for laying out the plurality of third MRelements 50C includes a first area, a second area, a third area, and afourth area. The first area is an area for laying out at least one thirdMR element 50C constituting the first resistor section R31 among theplurality of third MR elements 50C. The second area is an area forlaying out at least one third MR element 50C constituting the secondresistor section R32 among the plurality of third MR elements 50C. Thethird area is an area for laying out at least one third MR element 50Cconstituting the third resistor section R33 among the plurality of thirdMR elements 50C. The fourth area is an area for laying out at least onethird MR element 50C constituting the fourth resistor section R34 amongthe plurality of third MR elements 50C.

In the present example embodiment, a common area is used as the firstarea of the element layout area for laying out the plurality of secondMR elements 50B and the first area of the element layout area for layingout the plurality of third MR elements 50C. This common area willhereinafter be referred to as a first area A31.

Similarly, in the present example embodiment, a common area is used asthe second area of the element layout area for laying out the pluralityof second MR elements 50B and the second area of the element layout areafor laying out the plurality of third MR elements 50C. This common areawill hereinafter be referred to as a second area A32.

Similarly, in the present example embodiment, a common area is used asthe third area of the element layout area for laying out the pluralityof second MR elements 50B and the third area of the element layout areafor laying out the plurality of third MR elements 50C. This common areawill hereinafter be referred to as a third area A33.

Similarly, in the present example embodiment, a common area is used asthe fourth area of the element layout area for laying out the pluralityof second MR elements 50B and the fourth area of the element layout areafor laying out the plurality of third MR elements 50C. This common areawill hereinafter be referred to as a fourth area A34.

The positional relationships among the first to fourth areas A31, A32,A33, and A34 are the same as those among the first to fourth areas A21,A22, A23, and A24 of the element layout area of the first magneticsensor 10. The description of the positional relationships among thefirst to fourth areas A21, A22, A23, and A24 applies to those among thefirst to fourth areas A31, A32, A33, and A34 if the first to fourthareas A21, A22, A23, and A24 in the description are replaced with thefirst to fourth areas A31, A32, A33, and A34, respectively.

If the entire top surface 3 a of the second chip 3 is the element layoutarea of the second and third magnetic sensors 20 and 30, the elementlayout area may include an area for laying out the plurality of secondpads 31. If a part of the top surface 3 a of the second chip 3 is theelement layout area of the second and third magnetic sensors 20 and 30,the element layout area may or may not include the area for laying outthe plurality of second pads 31.

The operation and effect of the magnetic sensor device 1 according tothe present example embodiment will now be described. If stress occursin the support 4 due to an external force or temperature, the stressdistribution within the support 4 is symmetrical about the center ofgravity C4 of the reference plane 4 a. FIG. 17 is an explanatory diagramschematically showing the stress distribution within the support 4. InFIG. 17 , the stress distribution is shown using contour lines.

If stress is applied to an MR element 50, the magnetization direction ofthe magnetization pinned layer 52 in the MR element 50 can deviate fromits designed direction. For example, if tensile stress is applied to theMR element 50 in a direction intersecting the magnetization direction ofthe magnetization pinned layer 52, the magnetization direction of themagnetization pinned layer 52 changes slightly to the direction of thetensile stress. As a result, the resistance of the MR element 50 whenthe target magnetic field is not applied to the MR element 50 changes.

Now, the effect of stress applied to each MR element 50 on the detectionvalue will be discussed by using the first magnetic sensor 10 as anexample. Suppose that the magnitude of stress applied to each first MRelement 50A varies between the first resistor section R11 and the secondresistor section R12. In such a case, the amount of change in theresistance of the first resistor section R11 due to the stress and theamount of change in the resistance of the second resistor section R12due to the stress are different from each other. This causes an offsetin the first detection signal S11.

Similarly, if the magnitude of stress applied to each first MR element50A varies between the third resistor section R13 and the fourthresistor section R14, the amount of change in the resistance of thethird resistor section R13 due to the stress and the amount of change inthe resistance of the fourth resistor section R14 due to the stress aredifferent from each other. This causes an offset in the first detectionsignal S12. The offsets in the first detection signals S11 and S12 causean offset in the first detection value Su.

To make the magnitude of the stress applied to each first MR element 50Ain the first resistor section R11 and that in the second resistorsection R12 the same and make the magnitude of the stress applied toeach first MR element 50A in the third resistor section R13 and that inthe fourth resistor section R14 the same, the first chip 2 can bemounted on the support 4 so that the center of gravity of the planarshape of the first chip 2 matches the center of gravity C4 of thereference plane 4 a. However, in such a case, the second chip 3 may beunable to be mounted on the support 4 depending on the size of the firstchip 2 and the second chip 3.

By contrast, in the present example embodiment, the magnetizationdirections of the magnetization pinned layers 52 in each of the first tofourth resistor sections R11, R12, R13, and R14, the magnetizationdirections of the free layers 54 in each of the first to fourth resistorsections R11, R12, R13, and R14, and the layout of the first to fourthareas A21, A22, A23, and A24 of the element layout area of the firstmagnetic sensor 10 are defined as described above while locating thefirst chip 2 off the center of gravity C4 of the reference plane 4 a.According to the present example embodiment, an offset in the firstdetection value Su can thereby be prevented.

The reason why an offset in the first detection value Su can beprevented will be described in detail below. In the followingdescription, the term “resistance” refers to the resistance when thetarget magnetic field is not applied to the first magnetic sensor 10. Acase where stress in the second reference direction Ry is applied to thefirst magnetic sensor 10 will initially be described. Here, theresistance of the first resistor section R11 is denoted by r1, theresistance of the second resistor section R12 by r2, the resistance ofthe third resistor section R13 by r3, and the resistance of the fourthresistor section R14 by r4. Note that r1, r2, r3, and r4 are the same ifno stress is applied to the first magnetic sensor 10.

The first detection value Su depends on a difference S11−S12 between thefirst detection signal S11 and the first detection signal S12. Thedifference S11−S12 depends on a potential difference E between thesignal output ports E11 and E12. The potential difference E is expressedby the following expression (3):E=V·(r2·r4−r1·r3)/{(r1+r2)(r3+r4)}  (3)In expression (3), V is the voltage applied to the power supply port V1.

If stress in the second reference direction Ry is applied to the firstmagnetic sensor 10, r1 and r4 increase and r2 and r3 decrease, or r1 andr4 decrease and r2 and r3 increase. The stress distributions within therespective first to fourth areas A21, A22, A23, and A24 aresubstantially the same. If the mode of change in r1, r2, r3, and r4described above is applied to the expression (3), the potentialdifference E ideally hardly changes. In other words, hardly any offsetoccurs in the first detection value Su even if stress in the secondreference direction Ry is applied to the first magnetic sensor 10.

Next, a case where stress in the third reference direction Rx is appliedto the first magnetic sensor 10 will be described. The mode of increaseand decrease in r1, r2, r3, and r4 when stress in the third referencedirection Rx is applied to the first magnetic sensor 10 is the same aswhen stress in the second reference direction Ry is applied to the firstmagnetic sensor 10. The stress applied to the first and third areas A21and A23 is higher than the stress applied to the second and fourth areasA22 and A24. The amounts of change in r1 and r3 due to the stress arethus greater than the amounts of change in r2 and r4 due to the stress.If the mode of change in r1, r2, r3, and r4 described above is appliedto expression (3), the potential difference E ideally hardly changes. Inother words, hardly any offset occurs in the first detection value Sueven if stress in the third reference direction Rx is applied to thefirst magnetic sensor 10.

According to the present example embodiment, an offset in the firstdetection value Su can thus be prevented.

To obtain the foregoing effect, the magnetization directions of the freelayers 54 in each of the first to fourth resistor sections R11, R12,R13, and R14 need to be defined as described above. However, in somecases, the magnetization directions of the free layers 54 can bereversed from their designed directions because of an external magneticfield. In the present example embodiment, the first magnetic sensor 10includes the coil that is configured so that a magnetic field in the Xdirection is applied to either of the free layers 54 in each of thefirst and second resistance sections R11 and R12 or the free layers 54in each of the third and fourth resistor sections R13 and R14, and sothat a magnetic field in the −X direction is applied to the other of thefree layers 54. According to the present example embodiment, themagnetization directions of the free layers 54 can thereby be aligned tothe designed directions.

Up to this point, the effect of stress applied to each individual MRelement 50 has been described by using the first magnetic sensor 10 asan example. The foregoing description also applies to the second andthird magnetic sensors 20 and 30. According to the present exampleembodiment, an offset in the second detection value Sv and the thirddetection value Sz can be prevented.

Next, a manufacturing method for the magnetic sensor device 1 accordingto the present example embodiment will be briefly described. Themanufacturing method for the magnetic sensor device 1 includes a step offorming the first chip 2, a step of forming the second chip 3, and astep of mounting the first and second chips 2 and 3 on the support 4.

The step of forming the first chip 2 includes a step of forming thefirst magnetic sensor 10. The step of forming the second chip 3 includesa step of forming the second and third magnetic sensors 20 and 30. Thestep of forming the first magnetic sensor 10 and the step of forming thesecond and third magnetic sensors 20 and 30 each include a step offorming a plurality of MR elements 50.

In the step of forming a plurality of MR elements 50, a plurality ofinitial MR elements to later become the plurality of MR elements 50 areinitially formed. Each of the plurality of initial MR elements includesan initial magnetization pinned layer to later become the magnetizationpinned layer 52, a free layer 54, a gap layer 53, and anantiferromagnetic layer 51.

Next, the magnetization directions of the initial magnetization pinnedlayers are fixed to predetermined directions using laser light andexternal magnetic fields in the foregoing predetermined directions. Forexample, a plurality of initial MR elements to later become a pluralityof MR elements 50 constituting the first and third resistor sections R11and R13 of the first magnetic sensor 10 are irradiated with laser lightwhile an external magnetic field in the first magnetization direction (Udirection) is applied thereto. When the irradiation with the laser lightis completed, the magnetization directions of the initial magnetizationpinned layers are fixed to the first magnetization direction. This makesthe initial magnetization pinned layers into magnetization pinned layers52, and the initial MR elements into MR elements 50. In a plurality ofinitial MR elements to later become a plurality of MR elements 50constituting the second and fourth resistor sections R12 and R14 of thefirst magnetic sensor 10, the magnetization directions of the initialmagnetization pinned layers in each of the plurality of initial MRelements can be fixed to the second magnetization direction (−Udirection) by setting the direction of the external magnetic field tothe second magnetization direction. The plurality of MR elements 50 areformed in such a manner.

Modification Example

Next, a modification example of the present example embodiment will bedescribed with reference to FIG. 18 . FIG. 18 is a perspective viewshowing an MR element 50 according to the modification example. In themodification example, each of the first to third magnetic sensors 10,20, and 30 includes a magnetic field generator 75 including a pluralityof magnetic pairs of instead of the magnetic field generator includingthe coil. The magnetic field generator 75 is configured to apply amagnetic field, in the third magnetization direction or in the fourthmagnetization direction, to the free layer 54.

Each of the plurality of magnetic pairs includes two magnets 75A and75B. The magnet 75A is located near one longitudinal end of the MRelement 50. The magnet 75B is located near the other longitudinal end ofthe MR element 50. The magnetization of the magnets 75A and 75B includesa component in the third magnetization direction or a component in thefourth magnetization direction. Whether the magnetization of the magnets75A and 75B includes the component in the third magnetization directionor the component in the fourth magnetization direction is selected basedon the magnetization direction of the free layer 54 to which the magnets75A and 75B apply the magnetic field when the target magnetic field isnot applied.

If the magnetization of the magnets 75A and 75B includes a component ina specific magnetization direction, the component in the specificmagnetization direction may be a main component of the magnetization ofthe magnets 75A and 75B. Alternatively, the magnetization of the magnets75A and 75B may be free of a component in a direction orthogonal to thespecific magnetization direction. In the modification example, if themagnetization of the magnets 75A and 75B includes a component in aspecific magnetization direction, the magnetization directions of themagnets 75A and 75B are the same or substantially the same as thespecific magnetization direction.

According to the modification example, the magnetic field generator 75can prevent the magnetization direction of the free layer 54 from beingopposite to the designed direction because of an external magneticfield.

Second Example Embodiment

A second example embodiment of the technology will now be described. Inthe second example embodiment, the magnetization directions of the freelayers 54 of the MR elements 50 are different from those in the firstexample embodiment. The magnetization directions of the free layers 54will be described below with reference to FIGS. 19 to 21 . FIG. 19 is acircuit diagram showing a circuit configuration of the first magneticsensor 10. FIG. 20 is a circuit diagram showing a circuit configurationof the second magnetic sensor 20. FIG. 21 is a circuit diagram showing acircuit configuration of the third magnetic sensor 30.

In FIG. 19 , the hollow arrows represent the magnetization directions ofthe free layers 54 in the respective first to fourth resistor sectionsR11, R12, R13, and R14 of the first magnetic sensor 10 when the targetmagnetic field is not applied to the first magnetic sensor 10. As shownin FIG. 19 , the magnetization of the free layers 54 in each of thefirst and fourth resistor sections R11 and R14 of the first magneticsensor 10 includes a component in the third magnetization direction (Vdirection) in the foregoing case. The magnetization of the free layers54 in each of the second and third resistor sections R12 and R13 of thefirst magnetic sensor 10 includes a component in the fourthmagnetization direction (−V direction) in the foregoing case.

In FIG. 20 , the hollow arrows represent the magnetization directions ofthe free layers 54 in the respective first to fourth resistor sectionsR21, R22, R23, and R24 of the second magnetic sensor 20 when the targetmagnetic field is not applied to the second magnetic sensor 20. Thedescription of the magnetization directions of the free layers 54 in thefirst magnetic sensor 10 applies to the magnetization directions of thefree layers 54 in the second magnetic sensor 20 if the first magneticsensor 10, the resistor sections R11, R12, R13, and R14, the Vdirection, and the −V direction in the description are replaced with thesecond magnetic sensor 20, the resistor sections R21, R22, R23, and R24,the U direction, and the −U direction, respectively.

In FIG. 21 , the hollow arrows represent the magnetization directions ofthe free layers 54 in the respective first to fourth resistor sectionsR31, R32, R33, and R34 of the third magnetic sensor 30 when the targetmagnetic field is not applied to the third magnetic sensor 30. Thedescription of the magnetization directions of the free layers 54 in thefirst magnetic sensor 10 applies to the magnetization directions of thefree layers 54 in the third magnetic sensor 30 if the first magneticsensor 10, the resistor sections R11, R12 R13, and R14, the V direction,and the −V direction in the description are replaced with the thirdmagnetic sensor 30, the resistor sections R31, R32, R33, and R34, the Udirection, and the −U direction, respectively.

In the present example embodiment, the coil constituted by the pluralityof lower coil elements 63A and the plurality of upper coil element 64Aaccording to the first example embodiment, shown in FIGS. 11 and 12 , isconfigured differently from that in the first example embodiment. In thepresent example embodiment, the coil is configured so that a magneticfield in the X direction can be applied to either of the free layers 54in each of the first and fourth resistor sections R11 and R14 or thefree layers 54 in each of the second and third resistor sections R12 andR13, and a magnetic field in the −X direction can be applied to theother of the free layers 54.

In the present example embodiment, the coil constituted by the pluralityof lower coil elements 63B and the plurality of upper coil elements 64Baccording to the first example embodiment, shown in FIGS. 13 and 14 , isconfigured differently from that in the first example embodiment. In thepresent example embodiment, the coil is configured so that a magneticfield in the X direction can be applied to either of the free layers 54in each of the first and fourth resistor sections R21 and R24 of thesecond magnetic sensor 20 and the first and fourth resistor sections R31and R34 of the third magnetic sensor 30 or the free layers 54 in each ofthe second and third resistor sections R22 and R23 of the secondmagnetic sensor 20 and the second and third resistor sections R32 andR33 of the third magnetic sensor 30, and a magnetic field in the −Xdirection can be applied to the other of the free layers 54.

The operation and effect of the magnetic sensor device 1 according tothe present example embodiment will now be described. In the presentexample embodiment, the magnetization directions of the free layers 54in each of the first to fourth resistor sections R11, R12, R13, and R14is defined as described above. Moreover, in the present exampleembodiment, the magnetization directions of the magnetization pinnedlayers 52 in each of the first to fourth resistor sections R11, R12,R13, and R14 and the layout of the first to fourth areas A21, A22, A23,and A24 of the element layout area of the first magnetic sensor 10 aredefined as described in the first example embodiment (see FIG. 16 ).According to the present example embodiment, an offset in the firstdetection value Su can thus be prevented.

The reason why an offset in the first detection value Su can beprevented will be described in detail below. A case where stress in thesecond reference direction Ry is applied to the first magnetic sensor 10will initially be described. As in the first example embodiment, theresistance of the first resistor section R11 will be denoted by r1, theresistance of the second resistor section R12 by r2, the resistance ofthe third resistor section R13 by r3, and the resistance of the fourthresistor section R14 by r4. If stress in the second reference directionRy is applied to the first magnetic sensor 10, r1 and r2 increase and r3and r4 decrease, or r1 and r2 decrease and r3 and r4 increase. As in thefirst example embodiment, the respective amounts of change in r1, r2,r3, and r4 due to stress are substantially the same. If the mode ofchange in r1, r2, r3, and r4 described above is applied to theexpression (3) in the first example embodiment, the potential differenceE ideally hardly changes. In other words, hardly any offset occurs inthe first detection value Su even if stress in the second referencedirection Ry is applied to the first magnetic sensor 10.

Next, a case where stress in the third reference direction Rx is appliedto the first magnetic sensor 10 will be described. The mode of increaseand decrease in r1, r2, r3, and r4 when stress in the third referencedirection Rx is applied to the first magnetic sensor 10 is the same aswhen stress in the second reference direction Ry is applied to the firstmagnetic sensor 10. As in the first example embodiment, the amounts ofchange in r1 and r3 due to the stress are greater than the amounts ofchange in r2 and r4 due to the stress. If the mode of change in r1, r2,r3, and r4 described above is applied to the expression (3) in the firstexample embodiment, the potential difference E ideally hardly changes.In other words, hardly any offset occurs in the first detection value Sueven if stress in the third reference direction Rx is applied to thefirst magnetic sensor 10.

According to the present example embodiment, an offset in the firstdetection value Su can thus be prevented.

Up to this point, the description has been given by using the firstmagnetic sensor 10 as an example. The foregoing description also appliesto the second and third magnetic sensors 20 and 30. According to thepresent example embodiment, an offset in the second detection value Svand an offset in the third detection value Sz can be prevented.

The configuration, operation and effects of the present exampleembodiment are otherwise the same as those of the first exampleembodiment.

Third Example Embodiment

A third example embodiment of the technology will now be described. Inthe third example embodiment, the layout of the element layout area ofthe first magnetic sensor 10 and that of the element layout area of thesecond and third magnetic sensors 20 and 30 are different from those inthe first example embodiment. The layout of the element layout areaswill be described below with reference to FIG. 22 . FIG. 22 is anexplanatory diagram for describing the layout of the element layoutareas.

Initially, the layout of the first to fourth areas A21, A22, A23, andA24 in the element layout area of the first magnetic sensor 10 will bedescribed. In the present example embodiment, the second area A22 andthe third area A23 are arranged along the third reference direction Rxto sandwich the reference axis Ra therebetween when seen in the firstreference direction Rz. The first area A21 is located between the secondarea A22 and the third area A23 when seen in the first referencedirection Rz. The fourth area A24 is located between the first area A21and the third area A23 when seen in the first reference direction Rz. Inthe example shown in FIG. 22 , the first area A21 and the fourth areaA24 are also arranged along the third reference direction Rx to sandwichthe reference axis Ra therebetween when seen in the first referencedirection Rz.

In the present example embodiment, the second area A22 and the thirdarea A23 are symmetrically arranged about the reference axis Ra whenseen in the first reference direction Rz. The first area A21 and thefourth area A24 are also symmetrically arranged about the reference axisRa when seen in the first reference direction Rz.

Next, the layout of the first to fourth areas A31, A32, A33, and A34 inthe element layout area of the second and third magnetic sensors 20 and30 will be described. The positional relationships among the first tofourth areas A31, A32, A33, and A34 are the same as those among thefirst to fourth areas A21, A22, A23, and A24 in the element layout areaof the first magnetic sensor 10. The description of the positionalrelationships among the first to fourth areas A21, A22, A23, and A24applies to the positional relationships among the first to fourth areasA31, A32, A33, and A34 if the first to fourth areas A21, A22, A23, andA24 in the description are replaced with the first to fourth areas A31,A32, A33, and A34, respectively.

The operation and effect of the magnetic sensor device 1 according tothe present example embodiment will now be described. In the presentexample embodiment, the layout of the first to fourth areas A21, A22,A23, and A24 in the element layout area of the first magnetic sensor 10is defined as described above. Moreover, in the present exampleembodiment, the magnetization directions of the magnetization pinnedlayers 52 in each of the first to fourth resistor sections R11, R12,R13, and R14 of the first magnetic sensor 10 and the magnetizationdirections of the free layers 54 in each of the first to fourth resistorsections R11, R12, R13, and R14 are defined as described in the firstexample embodiment (see FIG. 8 ). According to the present exampleembodiment, an offset in the first detection value Su can thus beprevented.

The reason why an offset in the first detection value Su can beprevented will be described in detail below. A case where stress in thesecond reference direction Ry is applied to the first magnetic sensor 10will initially be described. As in the first example embodiment, theresistance of the first resistor section R11 will be denoted by r1, theresistance of the second resistor section R12 by r2, the resistance ofthe third resistor section R13 by r3, and the resistance of the fourthresistor section R14 by r4. Like the first example embodiment, if stressin the second reference direction Ry is applied to the first magneticsensor 10, r1 and r4 increase and r2 and r3 decrease, or r1 and r4decrease and r2 and r3 increase. The stress distributions within therespective first to fourth areas A21, A22, A23, and A24 aresubstantially the same. The respective amounts of change in r1, r2, r3,and r4 due to the stress are therefore substantially the same. The modeof change in r1, r2, r3, and r4 described above is the same as that inr1, r2, r3, and r4 when stress in the second reference direction Ry isapplied to the first magnetic sensor 10 of the first example embodiment.From the same reason as described in the first example embodiment,hardly any offset therefore occurs in the first detection value Su evenif stress in the second reference direction Ry is applied to the firstmagnetic sensor 10.

Next, a case where stress in the third reference direction Rx is appliedto the first magnetic sensor 10 will be described. The mode of increaseand decrease in r1, r2, r3, and r4 when stress in the third referencedirection Rx is applied to the first magnetic sensor 10 is the same aswhen stress in the second reference direction Ry is applied to the firstmagnetic sensor 10. The stress applied to the first and fourth areas A21and A24 is higher than that applied to the second and third areas A22and A23. The amounts of change in r1 and r4 due to the stress aretherefore greater than the amounts of change in r2 and r3 due to thestress. If the mode of change in r1, r2, r3, and r4 described above isapplied to the expression (3) in the first example embodiment, thepotential difference E ideally hardly changes. In other words, hardlyany offset occurs in the first detection value Su even if stress in thethird reference direction Rx is applied to the first magnetic sensor 10.

According to the present example embodiment, an offset in the firstdetection value Su can thus be prevented.

Up to this point, the description has been given by using the firstmagnetic sensor 10 as an example. The foregoing description also appliesto the second and third magnetic sensors 20 and 30. According to thepresent example embodiment, an offset in the second detection value Svand an offset in the third detection value Sz can be prevented.

The configuration, operation and effects of the present exampleembodiment are otherwise the same as those of the first exampleembodiment.

Fourth Example Embodiment

A fourth example embodiment of the technology will now be described. Inthe fourth example embodiment, the layout of the element layout area ofthe first magnetic sensor 10 and that of the element layout area of thesecond and third magnetic sensors 20 and 30 are different from those inthe first example embodiment. The layout of the element layout areaswill be described below with reference to FIG. 23 . FIG. 23 is anexplanatory diagram for describing the layout of the element layoutareas.

Initially, the layout of the first to fourth areas A21, A22, A23, andA24 in the element layout area of the first magnetic sensor 10 will bedescribed. In the present example embodiment, the first area A21 and thefourth area A24 are arranged along the third reference direction Rx sothat at least parts of the respective first and fourth areas A21 and A24sandwich the reference axis Ra therebetween when seen in the firstreference direction Rz. The second area A22 and the third area A23 arearranged along the third reference direction Rx so that at least partsof the respective second and third areas A22 and A23 sandwich thereference axis Ra therebetween when seen in the first referencedirection Rz. The second area A22 and the third area A23 are locatedforward of the first area A21 and the fourth area A24, respectively, inthe Y direction.

In particular, in the present example embodiment, the first area A21 andthe fourth area A24 are symmetrically arranged about the reference axisRa when seen in the first reference direction Rz. The second area A22and the third area A23 are symmetrically arranged about the referenceaxis Ra when seen in the first reference direction Rz. The first areaA21 and the second area A22 are symmetrically arranged about a virtualstraight line L1 orthogonal to the reference axis Ra when seen in thefirst reference direction Rz. The third area A23 and the fourth area A24are symmetrically arranged about the virtual straight line L1 when seenin the first reference direction Rz.

Next, the layout of the first to fourth areas A31, A32, A33, and A34 inthe element layout area of the second and third magnetic sensors 20 and30 will be described. The positional relationships among the first tofourth areas A31, A32, A33, and A34 are the same as those among thefirst to fourth areas A21, A22, A23, and A24 in the element layout areaof the first magnetic sensor 10 except for the layout of the second andthird areas A32 and A33 with respect to the first and fourth areas A31and A34. The description of the positional relationships among the firstto fourth areas A21, A22, A23, and A24 applies to the positionalrelationships among the first to fourth areas A31, A32, A33, and A34except for the layout of the second and third areas A32 and A33 withrespect to the first and fourth areas A31 and A34, if the first tofourth areas A21, A22, A23, and A24 in the description are replaced withthe first to fourth areas A31, A32, A33, and A34, respectively.

The second area A32 and the third area A33 are located forward of thefirst area A31 and the fourth area A34, respectively, in the −Ydirection. The first area A31 and the second area A32 are symmetricallyarranged about a virtual straight line L2 orthogonal to the referenceaxis Ra when seen in the first reference direction Rz. The third areaA33 and the fourth area A34 are symmetrically arranged about the virtualstraight line L2 when seen in the first reference direction Rz.

The operation and effect of the magnetic sensor device 1 according tothe present example embodiment will now be described. In the presentexample embodiment, the layout of the first to fourth areas A21, A22,A23, and A24 in the element layout area of the first magnetic sensor 10is defined as described above. Moreover, in the present exampleembodiment, the magnetization directions of the magnetization pinnedlayers 52 in each of the first to fourth resistor sections R11, R12,R13, and R14 of the first magnetic sensor 10 and the magnetizationdirections of the free layers 54 in each of the first to fourth resistorsections R11, R12, R13, and R14 are defined as described in the firstexample embodiment (see FIG. 8 ). According to the present exampleembodiment, an offset in the first detection value Su can thus beprevented.

The reason why an offset in the first detection value Su can beprevented will be described in detail below. A case where stress in thesecond reference direction Ry is applied to the first magnetic sensor 10will initially be described. As in the first example embodiment, theresistance of the first resistor section R11 will be denoted by r1, theresistance of the second resistor section R12 by r2, the resistance ofthe third resistor section R13 by r3, and the resistance of the fourthresistor section R14 by r4. If stress in the second reference directionRy is applied to the first magnetic sensor 10, r1 and r4 increase and r2and r3 decrease, or r1 and r4 decrease and r2 and r3 increase. Thestress applied to the first and fourth areas A21 and A24 is higher thanthat applied to the second and third areas A22 and A23. The amounts ofchange in r1 and r4 due to the stress are therefore greater than theamounts of change in r2 and r3 due to the stress. The mode of change inr1, r2, r3, and r4 described above is the same as that in r1, r2, r3,and r4 when stress in the third reference direction Rx is applied to thefirst magnetic sensor 10 of the first example embodiment. From the samereason as described in the first example embodiment, hardly any offsettherefore occurs in the first detection value Su even if stress in thesecond reference direction Ry is applied to the first magnetic sensor10.

Next, a case where stress in the third reference direction Rx is appliedto the first magnetic sensor 10 will be described. The mode of increaseand decrease in r1, r2, r3, and r4 when stress in the third referencedirection Rx is applied to the first magnetic sensor 10 is the same aswhen stress in the second reference direction Ry is applied to the firstmagnetic sensor 10. The stress distributions within the respective firstto fourth areas A21, A22, A23, and A24 are substantially the same. Therespective amounts of change in r1, r2, r3, and r4 due to the stress aretherefore substantially the same. The mode of change in r1, r2, r3, andr4 described above is the same as that in r1, r2, r3, and r4 when stressin the second reference direction Ry is applied to the first magneticsensor 10 of the first example embodiment. From the same reason asdescribed in the first example embodiment, hardly any offset thereforeoccurs in the first detection value Su even if stress in the thirdreference direction Rx is applied to the first magnetic sensor 10.

According to the present example embodiment, an offset in the firstdetection value Su can thus be prevented.

Up to this point, the description has been given by using the firstmagnetic sensor 10 as an example. The foregoing description also appliesto the second and third magnetic sensors 20 and 30. According to thepresent example embodiment, an offset in the second detection value Svand an offset in the third detection value Sz can be prevented.

The configuration, operation and effects of the present exampleembodiment are otherwise the same as those of the first exampleembodiment.

Fifth Example Embodiment

A fifth example embodiment of the technology will now be described. Inthe fifth example embodiment, the layout of the element layout area ofthe first magnetic sensor 10 and that of the element layout area of thesecond and third magnetic sensors 20 and 30 are different from those inthe fourth example embodiment. The layout of the element layout areaswill be described below with reference to FIG. 24 . FIG. 24 is anexplanatory diagram for describing the layout of the element layoutareas.

Initially, the layout of the first to fourth areas A21, A22, A23, andA24 in the element layout area of the first magnetic sensor 10 will bedescribed. The layout of the first to fourth areas A21, A22, A23, andA24 is the same as that in the fourth example embodiment except for thelayout of the second and third areas A22 and A23 with respect to thefirst and fourth areas A21 and A24. In the present example embodiment,the second area A22 and the third area A23 are located forward of thefirst area A21 and the fourth area A24, respectively, in the −Ydirection.

Next, the layout of the first to fourth areas A31, A32, A33, and A34 inthe element layout area of the second and third magnetic sensors 20 and30 will be described. The layout of the first to fourth areas A31, A32,A33, and A34 is the same as that in the fourth example embodiment exceptfor the layout of the second and third areas A32 and A33 with respect tothe first and fourth areas A31 and A34. In the present exampleembodiment, the second area A32 and the third area A33 are locatedforward of the first area A31 and the fourth area A34, respectively, inthe Y direction.

The operation and effect of the magnetic sensor device 1 according tothe present example embodiment will now be described. In the presentexample embodiment, the layout of the first to fourth areas A21, A22,A23, and A24 in the element layout area of the first magnetic sensor 10is defined as described above. Moreover, in the present exampleembodiment, the magnetization directions of the magnetization pinnedlayers 52 in each of the first to fourth resistor sections R11, R12,R13, and R14 of the first magnetic sensor 10 and the magnetizationdirections of the free layers 54 in each of the first to fourth resistorsections R11, R12, R13, and R14 are defined as described in the firstexample embodiment (see FIG. 8 ). According to the present exampleembodiment, an offset in the first detection value Su can thus beprevented.

The reason why an offset in the first detection value Su can beprevented will be described in detail below. A case where stress in thesecond reference direction Ry is applied to the first magnetic sensor 10will initially be described. As in the fourth example embodiment (thefirst example embodiment), the resistance of the first resistor sectionR11 will be denoted by r1, the resistance of the second resistor sectionR12 by r2, the resistance of the third resistor section R13 by r3, andthe resistance of the fourth resistor section R14 by r4. Like the fourthexample embodiment, if stress in the second reference direction Ry isapplied to the first magnetic sensor 10, r1 and r4 increase and r2 andr3 decrease, or r1 and r4 decrease and r2 and r3 increase. The stressapplied to the first and fourth areas A21 and A24 is lower than thatapplied to the second and third areas A22 and A23. The amounts of changein r1 and r4 due to the stress are thus smaller than the amounts ofchange in r2 and r3 due to the stress. If the mode of change in r1, r2,r3, and r4 described above is applied to the expression (3) in the firstexample embodiment, the potential difference E ideally hardly changes.In other words, hardly any offset occurs in the first detection value Sueven if stress in the third reference direction Rx is applied to thefirst magnetic sensor 10.

Next, a case where stress in the third reference direction Rx is appliedto the first magnetic sensor 10 will be described. The mode of increaseand decrease in r1, r2, r3, and r4 when stress in the third referencedirection Rx is applied to the first magnetic sensor 10 is the same aswhen stress in the second reference direction Ry is applied to the firstmagnetic sensor 10. Like the fourth example embodiment, the amounts ofchange in r1, r2, r3, and r4 due to the stress are substantially thesame. The mode of change in r1, r2, r3, and r4 described above is thesame as that in r1, r2, r3, and r4 when stress in the third referencedirection Rx is applied to the first magnetic sensor 10 of the fourthexample embodiment. From the same reason as described in the fourthexample embodiment, hardly any offset therefore occurs in the firstdetection value Su if stress in the third reference direction Rx isapplied to the first magnetic sensor 10.

According to the present example embodiment, an offset in the firstdetection value Su can thus be prevented.

Up to this point, the description has been given by using the firstmagnetic sensor 10 as an example. The foregoing description also appliesto the second and third magnetic sensors 20 and 30. According to thepresent example embodiment, an offset in the second detection value Svand an offset in the third detection value Sz can be prevented.

The configuration, operation, and effects of the present exampleembodiment are otherwise the same as those of the fourth exampleembodiment.

The technology is not limited to the foregoing example embodiments, andvarious modifications may be made thereto. For example, the magneticsensor device and the magnetic sensor system according to the technologyare not limited to the case of detecting the relative position of themagnetic field generator with respect to the magnetic sensor device, andmay also be applied to a case of detecting the orientation of themagnetic sensor device configured to be rotatable in a predeterminedmagnetic field.

The plurality of second MR elements 50B of the second magnetic sensor 20and the plurality of MR elements 50C of the third magnetic sensor 30 arenot limited to the inclined surfaces 35 a and 35 b of the plurality ofgrooves 35 c, and may be formed on inclined surfaces of a plurality ofprotrusions protruding in the Z direction from the top surface of theinsulating layer 35.

The second chip 3 may include two magnetic sensors to be used togenerate detection values corresponding to the component of the externalmagnetic field in the direction parallel to the V direction and thecomponent of the external magnetic field in the direction parallel tothe Z direction, instead of the second and third magnetic sensors 20 and30.

The first chip 2 may include a magnetic sensor to be used to generate adetection value corresponding to the component of the external magneticfield in the direction parallel to the V direction, instead of the firstmagnetic sensor 10. The second chip 3 may include two magnetic sensorsto be used to generate a detection value corresponding to the componentof the external magnetic field in the direction parallel to the Udirection and a detection value corresponding to the component of theexternal magnetic field in the direction parallel to the Z directioninstead of the second and third magnetic sensors 20 and 30.

The processor 40 does not need to be included in the support 4 and notneed to be integrated with the first and second chips 2 and 3.

The first to third magnetic sensors 10, 20, and 30 may be included inone chip. In such a case, the reference plane may be the top surface ofthe chip. The element layout area of the first magnetic sensor 10 andthe element layout area of the second and third magnetic sensors 20 and30 may be included in the reference plane.

The magnetic sensor device 1 does not need to include both the firstchip 2 and the second chip 3.

The element layout area of the first magnetic sensor 10 and the elementlayout area of the second and third magnetic sensors 20 and 30 may bedisposed in an orientation 90° rotated from the orientation shown in thediagrams about the center of gravity C4 of the reference plane 4 a. Insuch a case, the second reference direction is a direction parallel tothe X direction, and the third reference direction is a directionparallel to the Y direction.

The element layout area of the first magnetic sensor 10 and the elementlayout area of the second and third magnetic sensors 20 and 30 may bedisposed in an orientation 180° rotated from the orientation shown inthe drawings about the center of gravity C4 of the reference plane 4 a.

The angle that the first magnetization direction forms with respect tothe second reference direction Ry may be 0° or 90°.

In the third to fifth example embodiments, the magnetization directionsof the free layers 54 of the MR elements 50 may be the same as in thesecond example embodiment.

Obviously, various modification examples and variations of thetechnology are possible in the light of the above teachings. Thus, it isto be understood that, within the scope of the appended claims andequivalents thereof, the technology may be practiced in otherembodiments than the foregoing example embodiments.

What is claimed is:
 1. A magnetic sensor device comprising: at least onemagnetic sensor configured to detect a target magnetic field that is amagnetic field to be detected, the at least one magnetic sensorincluding a plurality of magnetoresistive elements and an element layoutarea for laying out the plurality of magnetoresistive elements; and asupport that supports the at least one magnetic sensor and has areference plane, wherein: when the magnetic sensor device is seen in afirst reference direction, a center of gravity of the element layoutarea is deviated from a center of gravity of the reference plane, thefirst reference direction being a direction perpendicular to thereference plane; the at least one magnetic sensor further includes afirst resistor section and a second resistor section connected in seriesin a first path that is a path electrically connecting a firstconnection point and a second connection point, and a third resistorsection and a fourth resistor section connected in series in a secondpath that is a path electrically connecting the first connection pointand the second connection point; the first and fourth resistor sectionsare connected to the first connection point; the second and thirdresistor sections are connected to the second connection point; theplurality of magnetoresistive elements constitute the first to fourthresistor sections; each of the plurality of magnetoresistive elementsincludes a magnetization pinned layer having magnetization whosedirection is fixed, a free layer having magnetization whose direction isvariable depending on the target magnetic field, and a gap layer locatedbetween the magnetization pinned layer and the free layer; themagnetization of the magnetization pinned layer in each of the first andthird resistor sections includes a component in a first magnetizationdirection, the first magnetization direction being a directionintersecting the first reference direction; the magnetization of themagnetization pinned layer in each of the second and fourth resistorsections includes a component in a second magnetization direction, thesecond magnetization direction being a direction intersecting the firstreference direction and opposite to the first magnetization direction;the magnetization of the free layer in each of two of the first tofourth resistor sections includes a component in a third magnetizationdirection when the target magnetic field is not applied to the at leastone magnetic sensor, the third magnetization direction being a directionintersecting the first reference direction and orthogonal to the firstmagnetization direction; and the magnetization of the free layer in eachof the other two of the first to fourth resistor sections includes acomponent in a fourth magnetization direction when the target magneticfield is not applied to the at least one magnetic sensor, the fourthmagnetization direction being a direction intersecting the firstreference direction and opposite to the third magnetization direction.2. The magnetic sensor device according to claim 1, wherein: themagnetization of the free layer in each of the first and second resistorsections includes a component in the third magnetization direction whenthe target magnetic field is not applied to the at least one magneticsensor; and the magnetization of the free layer in each of the third andfourth resistor sections includes a component in the fourthmagnetization direction when the target magnetic field is not applied tothe at least one magnetic sensor.
 3. The magnetic sensor deviceaccording to claim 1, wherein: the magnetization of the free layer ineach of the first and fourth resistor sections includes a component inthe third magnetization direction when the target magnetic field is notapplied to the at least one magnetic sensor; and the magnetization ofthe free layer in each of the second and third resistor sectionsincludes a component in the fourth magnetization direction when thetarget magnetic field is not applied to the at least one magneticsensor.
 4. The magnetic sensor device according to claim 1, wherein: adeviation of the center of gravity of the element layout area from thecenter of gravity of the reference plane in a second reference directionis greater than a deviation of the center of gravity of the elementlayout area from the center of gravity of the reference plane in a thirdreference direction, the second reference direction and the thirdreference direction being two directions orthogonal to the firstreference direction; and an angle that the first magnetization directionforms with respect to the second reference direction is in a rangegreater than 0° and less than 90°.
 5. The magnetic sensor deviceaccording to claim 1, wherein: the at least one magnetic sensor furtherincludes a magnetic field generator; and the magnetic field generator isconfigured to apply a magnetic field, in a direction intersecting eachof the first to fourth magnetization directions, to the free layer. 6.The magnetic sensor device according to claim 1, wherein: the at leastone magnetic sensor further includes a magnetic field generator; and themagnetic field generator is configured to apply a magnetic field, in thethird magnetization direction or in the fourth magnetization direction,to the free layer.
 7. The magnetic sensor device according to claim 1,wherein: a deviation of the center of gravity of the element layout areafrom the center of gravity of the reference plane in a second referencedirection is greater than a deviation of the center of gravity of theelement layout area from the center of gravity of the reference plane ina third reference direction, the second reference direction and thethird reference direction being two directions orthogonal to the firstreference direction; the element layout area includes a first area forlaying out at least one magnetoresistive element constituting the firstresistor section among the plurality of magnetoresistive elements, asecond area for laying out at least one magnetoresistive elementconstituting the second resistor section among the plurality ofmagnetoresistive elements, a third area for laying out at least onemagnetoresistive element constituting the third resistor section amongthe plurality of magnetoresistive elements, and a fourth area for layingout at least one magnetoresistive element constituting the fourthresistor section among the plurality of magnetoresistive elements; andat least two of the first to fourth areas are arranged along the thirdreference direction so that at least parts of the respective at leasttwo areas sandwich a reference axis therebetween when the areas are seenin the first reference direction, the reference axis being a straightline parallel to the second reference direction and passing through thecenter of gravity of the reference plane.
 8. The magnetic sensor deviceaccording to claim 7, wherein: the second area and the fourth area arearranged along the third reference direction to sandwich the referenceaxis therebetween when the areas are seen in the first referencedirection; the first area is located between the second area and thefourth area when the areas are seen in the first reference direction;and the third area is located between the first area and the second areawhen the areas are seen in the first reference direction.
 9. Themagnetic sensor device according to claim 7, wherein: the second areaand the third area are arranged along the third reference direction tosandwich the reference axis therebetween when the areas are seen in thefirst reference direction; the first area is located between the secondarea and the third area when the areas are seen in the first referencedirection; and the fourth area is located between the first area and thethird area when the areas are seen in the first reference direction. 10.The magnetic sensor device according to claim 7, wherein: the first areaand the fourth area are arranged along the third reference direction sothat at least parts of the respective first and fourth areas sandwichthe reference axis therebetween when the areas are seen in the firstreference direction; the second area and the third area are arrangedalong the third reference direction so that at least parts of therespective second and third areas sandwich the reference axistherebetween when the areas are seen in the first reference direction;and the second area and the third area are located forward of the firstarea and the fourth area, respectively, in a direction parallel to thesecond reference direction.
 11. The magnetic sensor device according toclaim 10, wherein: the first area and the second area are symmetricallyarranged about a virtual straight line orthogonal to the reference axiswhen the areas are seen in the first reference direction; and the thirdarea and the fourth area are symmetrically arranged about the virtualstraight line when the areas are seen in the first reference direction.12. The magnetic sensor device according to claim 7, wherein the atleast two areas are symmetrically arranged about the reference axis whenthe areas are seen in the first reference direction.
 13. The magneticsensor device according to claim 7, wherein the center of gravity of theelement layout area overlaps the reference axis when the element layoutarea is seen in the first reference direction.
 14. The magnetic sensordevice according to claim 1, wherein: the at least one magnetic sensorincludes one magnetic sensor; and the one magnetic sensor is configuredto detect a component of the target magnetic field in one direction, andgenerate at least one detection signal having a correspondence with thecomponent in the one direction.
 15. The magnetic sensor device accordingto claim 14, further comprising a chip including the one magneticsensor, wherein the chip is mounted on the reference plane.
 16. Themagnetic sensor device according to claim 1, wherein: the at least onemagnetic sensor includes two magnetic sensors; and the two magneticsensors are configured to detect components of the target magnetic fieldin two directions different from each other.
 17. The magnetic sensordevice according to claim 16, further comprising a chip including thetwo magnetic sensors, wherein the chip is mounted on the referenceplane.
 18. The magnetic sensor device according to claim 16, whereineach of the two directions of the target magnetic field is a directionoblique to both the reference plane and the first reference direction.19. The magnetic sensor device according to claim 1, wherein: the atleast one magnetic sensor includes a first magnetic sensor, a secondmagnetic sensor, and a third magnetic sensor; the first magnetic sensoris configured to detect a component of the target magnetic field in afirst direction; the second magnetic sensor is configured to detect acomponent of the target magnetic field in a second direction; the thirdmagnetic sensor is configured to detect a component of the targetmagnetic field in a third direction; the magnetic sensor device furthercomprises a first chip including the first magnetic sensor, and a secondchip including the second and third magnetic sensors; and the first andsecond chips are mounted on the reference plane, and arranged along asecond reference direction orthogonal to the first reference direction.20. The magnetic sensor device according to claim 19, wherein: the firstdirection is a direction parallel to the reference plane; the seconddirection is a direction oblique to both the reference plane and thefirst reference direction; and the third direction is another directionoblique to both the reference plane and the first reference direction.21. A magnetic sensor system comprising: the magnetic sensor deviceaccording to claim 1; and a magnetic field generator that generates apredetermined magnetic field, wherein the magnetic field generator isable to change a relative position of the magnetic field generator withrespect to the magnetic sensor device along a predetermined sphericalsurface.
 22. A manufacturing method for the magnetic sensor deviceaccording to claim 1, comprising: a step of forming the at least onemagnetic sensor; and a step of mounting the at least one magnetic sensoron the support, wherein the step of forming the at least one magneticsensor includes a step of forming the plurality of magnetoresistiveelements; and the step of forming the plurality of magnetoresistiveelements includes a step of forming a plurality of initialmagnetoresistive elements each including an initial magnetization pinnedlayer to later become the magnetization pinned layer, the free layer,and the gap layer, and a step of fixing a magnetization direction of theinitial magnetization pinned layer using laser light and an externalmagnetic field.